Inventor

APALKOV DMYTRO

US80 patents

⚠️ This page may combine multiple inventors who share the name “APALKOV DMYTRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APALKOV DMYTRO

SAMSUNG ELECTRONICS CO LTD

Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions

Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field

Quantum computing device spin transfer torque magnetic memory

Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions

Method and system for engineering the secondary barrier layer in dual magnetic junctions

Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices

Method and system for providing magnetic junctions including Heusler multilayers

Vertical spin orbit torque devices

Multilayered vertical spin-orbit torque devices

Race-track memory with improved writing scheme

Selectorless 3D stackable memory

Vertical spin orbit torque devices

Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing

Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications

Spin-torque oscillator based on easy-cone anisotropy

Method and system for providing magnetic junctions with rare earth-transition metal layers

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers

Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications

Diffusionless transformations in MTJ stacks

Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching

Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer

Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque

B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM

Method and system for providing a magnetic junction having a low damping hybrid free layer

Spin-orbit torque magnetic random-access memory (SOT-MRAM) device

Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories

Dipole-coupled spin-orbit torque structure

APALKOV DMYTRO

Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories

Method and system for providing a magnetic junction using half metallic ferromagnets

Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements

Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions

Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy

Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories

Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories

Method and system for providing magnetic junctions having a graded magnetic free layer

Method and system for providing multiple logic cells in a single stack

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

GRANDIS INC

Method and system for providing a spin transfer device with improved switching characteristics

Magnetic elements having a bias field and magnetic memory devices using the magnetic elements

Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled

Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements

Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy

KHVALKOVSKIY ALEXEY VASILYEVITCH

Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction

Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof

CHEN EUGENE YOUJUN

Three terminal magnetic element

TANG XUETI

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

KROUNBI MOHAMAD TOWFIK

Method and system for providing a magnetic tunneling junction using thermally assisted switching

ONG ADRIAN E

Multi-supply symmetric driver circuit and timing method

CHEPULSKYY ROMAN

Magnetic element having perpendicular anisotropy with enhanced efficiency