Inventor
HWANG IN-JUN
KR65 patents
⚠️ This page may combine multiple inventors who share the name “HWANG IN-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS6166781ADec 26, 2000
Non-linear characteristic correction apparatus and method therefor
SAMSUNG ELECTRONICS CO LTD71 citations92
US7952905B2May 31, 2011
Data storage device using magnetic domain wall movement and method of operating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7751223B2Jul 6, 2010
Magnetic memory devices using magnetic domain motion
SAMSUNG ELECTRONICS CO LTD12 citations84
US7738278B2Jun 15, 2010
Magnetic memory device using magnetic domain motion
SAMSUNG ELECTRONICS CO LTD18 citations84
US7508699B2Mar 24, 2009
Magnetic memory device and method
SAMSUNG ELECTRONICS CO LTD9 citations84
US7439770B2Oct 21, 2008
Magnetic tunneling junction based logic circuits and methods of operating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US9231093B2Jan 5, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US9117890B2Aug 25, 2015
High-electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations83
US8785944B2Jul 22, 2014
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD16 citations83
US7936030B2May 3, 2011
Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween
SAMSUNG ELECTRONICS CO LTD9 citations83
US7477539B2Jan 13, 2009
Magnetic device using magnetic domain dragging and method of operating the same
SAMSUNG ELECTRONICS CO LTD14 citations81
US7755930B2Jul 13, 2010
Semiconductor memory device and magneto-logic circuit
SAMSUNG ELECTRONICS CO LTD7 citations74
US7165197B2Jan 16, 2007
Apparatus and method of analyzing a magnetic random access memory
SAMSUNG ELECTRONICS CO LTD9 citations74
US6438179B1Aug 20, 2002
Frequency demodulation apparatus and method
SAMSUNG ELECTRONICS CO LTD10 citations74
US9245738B2Jan 26, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US9076850B2Jul 7, 2015
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD4 citations73
US8681542B2Mar 25, 2014
Magnetic memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US7272033B2Sep 18, 2007
Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9356592B2May 31, 2016
Method of reducing current collapse of power device
SAMSUNG ELECTRONICS CO LTD4 citations68
US10374082B2Aug 6, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations66
US9252253B2Feb 2, 2016
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD2 citations63
US9252255B2Feb 2, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7889533B2Feb 15, 2011
Semiconductor device using magnetic domain wall movement and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7732855B2Jun 8, 2010
Semiconductor memory device including recessed control gate electrode
SAMSUNG ELECTRONICS CO LTD4 citations63
US7548449B2Jun 16, 2009
Magnetic memory device and methods thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7378716B2May 27, 2008
Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7811833B2Oct 12, 2010
Method of manufacturing a multi-purpose magnetic film structure
SAMSUNG ELECTRONICS CO LTD2 citations62
US9859410B2Jan 2, 2018
High electron mobility transistors and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
HWANG IN-JUN
13 patentsUS8569769B2Oct 29, 2013
E-mode high electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN21 citations92
US9443968B2Sep 13, 2016
High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
HWANG IN-JUN10 citations84
US8816396B2Aug 26, 2014
E-mode high electron mobility transistor and method of manufacturing the same
HWANG IN-JUN15 citations84
US8514619B2Aug 20, 2013
Magnetic memory devices and methods of operating the same
HWANG IN-JUN6 citations84
US9660048B2May 23, 2017
High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same
HWANG IN-JUN5 citations73
US8796737B2Aug 5, 2014
High electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN5 citations73
US9543391B2Jan 10, 2017
High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
HWANG IN-JUN6 citations72
US8878246B2Nov 4, 2014
High electron mobility transistors and methods of fabricating the same
HWANG IN-JUN3 citations63
US8437160B2May 7, 2013
Multi-stack memory device
HWANG IN-JUN2 citations63
US8422275B2Apr 16, 2013
Magnetic memory device and method
HWANG IN-JUN1 citations63
US8218362B2Jul 10, 2012
Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
HWANG IN-JUN4 citations63
US9245947B2Jan 26, 2016
High electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN2 citations62
US9729841B2Aug 8, 2017
Video decoding system having compensation function
HWANG IN-JUN0 citations52
KIM HO-JUNG
2 patentsLEE JEONG-YUB
1 patentLIM CHEE-KHENG
1 patentKIM KEE-WON
1 patentKIM KWANG-SEOK
1 patentPI UNG-HWAN
1 patentHONG KI-HA
1 patentIUCF HYU ERICA CAMPUS
1 patentShowing the top 50 of 65 patents by PatentIndex Score.