Inventor
KIM JONG-SEOB
KR91 patents
⚠️ This page may combine multiple inventors who share the name “KIM JONG-SEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS7435996B2Oct 14, 2008
Nanowire light emitting device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD25 citations92
US7955562B2Jun 7, 2011
Chemical sensor using thin-film sensing member
SAMSUNG ELECTRONICS CO LTD7 citations84
US7936028B2May 3, 2011
Spin field effect transistor using half metal and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7929349B2Apr 19, 2011
Method of operating nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US7453097B2Nov 18, 2008
Nanowire light emitting device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7358524B2Apr 15, 2008
Nanowire device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US9231093B2Jan 5, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US9117890B2Aug 25, 2015
High-electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations83
US9245738B2Jan 26, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US9076850B2Jul 7, 2015
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD4 citations73
US8772834B2Jul 8, 2014
High electron mobility transistor and method of driving the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US9356592B2May 31, 2016
Method of reducing current collapse of power device
SAMSUNG ELECTRONICS CO LTD4 citations68
US9252255B2Feb 2, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US8004906B2Aug 23, 2011
Nonvolatile memory device and method of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7978006B2Jul 12, 2011
Quantum interference transistors and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7919786B2Apr 5, 2011
Nanowire light emitting device
SAMSUNG ELECTRONICS CO LTD5 citations63
US7787302B2Aug 31, 2010
Flash memory device, method of manufacturing the same, and method of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
CHEIL IND INC
8 patentsUS7981594B2Jul 19, 2011
Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same
CHEIL IND INC19 citations92
US7378217B2May 27, 2008
Antireflective hardmask composition and methods for using same
CHEIL IND INC25 citations92
US6855458B1Feb 15, 2005
Non-aqueous electrolyte composition for batteries
CHEIL IND INC25 citations91
US7514199B2Apr 7, 2009
Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same
CHEIL IND INC12 citations84
US7862990B2Jan 4, 2011
Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer
CHEIL IND INC12 citations83
US7655386B2Feb 2, 2010
Polymer having antireflective properties, hardmask composition including the same, process for forming a patterned material layer, and associated device
CHEIL IND INC9 citations83
US7851789B2Dec 14, 2010
Photosensitive resin composition for pad protective layer, and method for making image sensor using the same
CHEIL IND INC12 citations82
US7022145B2Apr 4, 2006
Lithium secondary battery
CHEIL IND INC7 citations73
HWANG IN-JUN
6 patentsUS8569769B2Oct 29, 2013
E-mode high electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN21 citations92
US9443968B2Sep 13, 2016
High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
HWANG IN-JUN10 citations84
US8816396B2Aug 26, 2014
E-mode high electron mobility transistor and method of manufacturing the same
HWANG IN-JUN15 citations84
US9660048B2May 23, 2017
High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same
HWANG IN-JUN5 citations73
US8878246B2Nov 4, 2014
High electron mobility transistors and methods of fabricating the same
HWANG IN-JUN3 citations63
US9245947B2Jan 26, 2016
High electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN2 citations62
SAMSUNG SDI CO LTD
5 patentsUS7255966B2Aug 14, 2007
Electrolyte for lithium secondary battery and lithium secondary battery comprising same
SAMSUNG SDI CO LTD16 citations92
US7241536B2Jul 10, 2007
Electrolyte for lithium secondary battery and lithium secondary battery comprising same
SAMSUNG SDI CO LTD29 citations92
US6544685B2Apr 8, 2003
Electrolyte for lithium secondary battery
SAMSUNG SDI CO LTD13 citations82
US6846594B2Jan 25, 2005
Lithium secondary battery
SAMSUNG SDI CO LTD5 citations73
US6645674B2Nov 11, 2003
Ether derivative additive in nonaqueous electrolyte of a lithium secondary battery
SAMSUNG SDI CO LTD8 citations73
HONG KI-HA
3 patentsECOPRO CO LTD
2 patentsUS7829219B2Nov 9, 2010
Cathode for lithium secondary batteries having improved coating properties and lithium secondary batteries using the same
ECOPRO CO LTD13 citations81
US7625670B2Dec 1, 2009
Cathode material for secondary batteries with non-aqueous electrolyte, a process for preparing the cathode material and lithium secondary battery containing the same
ECOPRO CO LTD11 citations81
KIM HO-JUNG
2 patentsYOON KYONG HO
1 patentKIM MIN SOO
1 patentKOREA ADVANCED INST SCI & TECH
1 patentKIM SANG KYUN
1 patentLIM SANG-HAK
1 patentCHEON HWAN SUNG
1 patentKIM MI YOUNG
1 patentShowing the top 50 of 91 patents by PatentIndex Score.