Inventor

SUGAWA SHIGETOSHI

JP175 patents

⚠️ This page may combine multiple inventors who share the name “SUGAWA SHIGETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUGAWA SHIGETOSHI

CANON KK

Solid state image pickup apparatus

Amplification-type solid state imaging device with reduced shading

Solid-state image pickup apparatus

Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor

Solid-state image pickup device using layers having different refractive indices

Solid-state image pickup device

Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness

Image sensing apparatus arranged on a single substrate

Image sensing device using MOS type image sensing elements

Solid-state image pickup element

Solid state image pickup device and signal reading method thereof

Liquid crystal image display unit and method for fabricating semiconductor optical member

Signal processor having avalanche photodiodes

Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate

Liquid crystal display device

Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip

Solid-state image sensing apparatus and method of operating the same

Solid state image pickup device with LDD structure and reset transistor

Solid-state image pickup device with optimum layout of building components around a photoelectric conversion portion

Image sensing device capable of outputting image signals by blocks and processing circuit which processes image signals by blocks

Liquid crystal image display unit and method for fabricating semiconductor optical member

Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device

Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes

Laminated solid-state image sensing apparatus and method of manufacturing the same

Liquid crystal display with display area having same height as peripheral portion thereof

Laminated solid-state image pickup device

Photoelectric converting device and information processing apparatus employing the same

Photoelectric conversion apparatus without isolation regions

Photoelectric converting apparatus having carrier eliminating means

Photoelectric conversion apparatus

Image pickup element

Solid-state image pickup device and method of resetting the same

Image pickup apparatus capable of switching modes based on signals from photoelectric conversion pixels

Image pickup apparatus with color filter array and means for adding and subtracting signals

Method for driving liquid crystal display device

Sensor unit capable of outputting image signals by blocks and processing circuit which processes image signals by blocks

Photoelectric transducer

Production process of color liquid crystal display device

TOKYO ELECTRON LTD

Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof

Plasma processing device

Semiconductor device fabricated on surface of silicon having &lt;110&gt; direction of crystal plane and its production method

OHMI TADAHIRO

Method of forming a dielectric film

Flash memory device and a fabrication process thereof, method of forming a dielectric film

Semiconductor device

SHINETSU HANDOTAI KK

Bonded wafer and method of producing bonded wafer

Single crystal cutting method

TADAHIRO OHMI

Flash memory device and fabrication process thereof, method of forming a dielectric film

Flash memory device and a fabrication process thereof, method of forming a dielectric film

HASHIMOTO SEIJI

Signal read-out circuit which lowers diffusion capacitance by limiting emitting current with resistive elements

(unassigned)

Image signal processing method, image signal processing system, storage medium, and image sensing apparatus

Semiconductor device fabricated on surface of silicon having <110> direction of crystal plane and its production method