Inventor
JEONG JIHOON
KR42 patents
⚠️ This page may combine multiple inventors who share the name “JEONG JIHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS9368647B2Jun 14, 2016
Compositions for etching
SAMSUNG ELECTRONICS CO LTD15 citations82
US9831081B2Nov 28, 2017
Method for treating substrate
SAMSUNG ELECTRONICS CO LTD3 citations73
US10991600B2Apr 27, 2021
Process chamber and substrate processing apparatus including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9627233B2Apr 18, 2017
Substrate treating apparatus
SAMSUNG ELECTRONICS CO LTD4 citations72
US10825698B2Nov 3, 2020
Substrate drying apparatus, facility of manufacturing semiconductor device, and method of drying substrate
SAMSUNG ELECTRONICS CO LTD2 citations71
US12287147B2Apr 29, 2025
Wafer processing equipment and method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations63
US11610788B2Mar 21, 2023
Process chamber and substrate processing apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12422754B2Sep 23, 2025
Substrate processing apparatus, semiconductor manufacturing equipment, and substrate processing method
SAMSUNG ELECTRONICS CO LTD0 citations61
US12308255B2May 20, 2025
Apparatus and method for drying substrate
SAMSUNG ELECTRONICS CO LTD0 citations61
US12057323B2Aug 6, 2024
Substrate processing method, micropattern forming method, and substrate processing apparatus
SAMSUNG ELECTRONICS CO LTD0 citations61
US11935772B2Mar 19, 2024
Apparatus for processing a substrate
SAMSUNG ELECTRONICS CO LTD0 citations61
US11640115B2May 2, 2023
Substrate processing apparatus, semiconductor manufacturing equipment, and substrate processing method
SAMSUNG ELECTRONICS CO LTD0 citations61
US9136120B2Sep 15, 2015
Compositions for etching and methods of forming a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US11527399B2Dec 13, 2022
Wafer cleaning apparatus based on light irradiation and wafer cleaning system including the same
SAMSUNG ELECTRONICS CO LTD1 citations53
US12463061B2Nov 4, 2025
Wafer drying apparatus, wafer processing system including the same, and wafer processing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12523935B2Jan 13, 2026
Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12216408B2Feb 4, 2025
Apparatus for drying wafer and method for drying wafer
SAMSUNG ELECTRONICS CO LTD0 citations51
US12578647B2Mar 17, 2026
Substrate rotating apparatus, substrate processing system including the same, and substrate processing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11302526B2Apr 12, 2022
Supercritical drying apparatus and method of drying substrate using the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US11342203B2May 24, 2022
Substrate cleaning apparatus and substrate cleaning method using the same
SAMSUNG ELECTRONICS CO LTD0 citations45
QUALCOMM INC
16 patentsUS9413344B2Aug 9, 2016
Automatic calibration circuits for operational calibration of critical-path time delays in adaptive clock distribution systems, and related methods and systems
QUALCOMM INC21 citations89
US9842634B2Dec 12, 2017
Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods
QUALCOMM INC7 citations83
US9741452B2Aug 22, 2017
Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods
QUALCOMM INC6 citations83
US9251875B1Feb 2, 2016
Register file circuit and method for improving the minimum operating supply voltage
QUALCOMM INC16 citations81
US10622043B2Apr 14, 2020
Multi-pump memory system access circuits for sequentially executing parallel memory operations
QUALCOMM INC2 citations73
US10224084B2Mar 5, 2019
Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods
QUALCOMM INC1 citations72
US10163490B2Dec 25, 2018
P-type field-effect transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells, and related memory systems and methods
QUALCOMM INC2 citations72
US11270761B2Mar 8, 2022
Dual-mode high-bandwidth SRAM with self-timed clock circuit
QUALCOMM INC0 citations62
US10978139B2Apr 13, 2021
Dual-mode high-bandwidth SRAM with self-timed clock circuit
QUALCOMM INC0 citations62
US10026456B2Jul 17, 2018
Bitline positive boost write-assist circuits for memory bit cells employing a P-type Field-Effect transistor (PFET) write port(s), and related systems and methods
QUALCOMM INC1 citations62
US9984730B2May 29, 2018
Negative supply rail positive boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods
QUALCOMM INC1 citations62
US12592700B2Mar 31, 2026
Logic optimizing power switch enable delay
QUALCOMM INC0 citations53
US11031075B2Jun 8, 2021
High bandwidth register file circuit with high port counts for reduced bitline delay
QUALCOMM INC0 citations52
US10424392B2Sep 24, 2019
Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods
QUALCOMM INC0 citations51
US10115481B2Oct 30, 2018
Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods
QUALCOMM INC0 citations51
US9947406B2Apr 17, 2018
Dynamic tag compare circuits employing P-type field-effect transistor (PFET)-dominant evaluation circuits for reduced evaluation time, and related systems and methods
QUALCOMM INC0 citations41