P

Inventor

OGAWA HISASHI

JP101 patents
⚠️ This page may combine multiple inventors who share the name “OGAWA HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOYOTA MOTOR CO LTD

17 patents

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

16 patents
US5164337ANov 17, 1992

Method of fabricating a semiconductor device having a capacitor in a stacked memory cell

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD123 citations98
US5275972AJan 4, 1994

Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD123 citations97
US4977104ADec 11, 1990

Method for producing a semiconductor device by filling hollows with thermally decomposed doped and undoped polysilicon

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD97 citations95
US5405800AApr 11, 1995

Method of fabricating a semiconductor memory device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US5406103AApr 11, 1995

Semiconductor memory device with stacked capacitor above bit lines

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations93
US6642564B2Nov 4, 2003

Semiconductor memory and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations92
US5693557ADec 2, 1997

Method of fabricating a semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US5474949ADec 12, 1995

Method of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gas

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US5399890AMar 21, 1995

Semiconductor memory device in which a capacitor electrode of a memory cell and an interconnection layer of a peripheral circuit are formed in one level

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD50 citations92
US5384276AJan 24, 1995

Method of fabricating a memory device with a multilayer insulating film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US5786273AJul 28, 1998

Semiconductor device and associated fabrication method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations91
US6762445B2Jul 13, 2004

DRAM memory cell with dummy lower electrode for connection between upper electrode and upper layer interconnect

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6784474B2Aug 31, 2004

Semiconductor memory device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6995415B2Feb 7, 2006

Semiconductor device and its manufacturing method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations73
US5661068AAug 26, 1997

Method of fabricating a semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5315543AMay 24, 1994

Semiconductor memory device and a manufacturing method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations73

NIPPON SHEET GLASS CO LTD

7 patents

SHINWA KK

4 patents

PANASONIC CORP

3 patents

FANUC LTD

1 patent

MATSUSHITA ELECTRONICS CORP

1 patent

TOKAI RIKA CO LTD

1 patent

Showing the top 50 of 101 patents by PatentIndex Score.