Inventor
TSAI YI-JEN
TW10 patents
Patents
10 patentsUS11532697B2Dec 20, 2022
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10879463B2Dec 29, 2020
Phase change memory structure to reduce power consumption
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10790444B2Sep 29, 2020
Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10505110B2Dec 10, 2019
Phase change memory structure to reduce power consumption
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10164181B2Dec 25, 2018
Sidewall protection of memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11855127B2Dec 26, 2023
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189787B2Nov 30, 2021
Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10943783B2Mar 9, 2021
Method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10636670B2Apr 28, 2020
Method of planarizing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10490742B2Nov 26, 2019
Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51