Inventor

AFZALIAN ARYAN

BE21 patents

⚠️ This page may combine multiple inventors who share the name “AFZALIAN ARYAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AFZALIAN ARYAN

TAIWAN SEMICONDUCTOR MFG CO LTD

Nanowire CMOS structure and formation methods

Method for manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device

Method for manufacturing semiconductor device

Method of fabricating semiconductor device

Leakage current suppression methods and related structures

Nanowire FinFET Transistor

Nanowire FinFet transistor

Field effect transistors and methods of forming same

Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivities

Leakage current suppression methods and related structures

Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivities

IMEC VZW

Field-effect transistor device

Dynamically doped field-effect transistor and a method for controlling such

TAIWAN SEMICONDUCTOR MFG

Field effect transistors and methods of forming same