Inventor

WAHL UWE

DE44 patents

⚠️ This page may combine multiple inventors who share the name “WAHL UWE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WAHL UWE

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device and integrated apparatus comprising the same

Super junction semiconductor device comprising implanted zones

Manufacturing a super junction semiconductor device

Super junction semiconductor device having columnar super junction regions

Semiconductor device with a super junction structure having a vertical impurity distribution

Integrated circuit including a semiconductor assembly in thin-SOI technology

Lateral MISFET and method for fabricating it

Method of manufacturing a super junction semiconductor device with overcompensation zones

Super junction semiconductor device with overcompensation zones

Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configuration

Lateral SOI component having a reduced on resistance

INFINEON TECHNOLOGIES AG

Lateral semiconductor component with a drift zone having at least one field electrode

Power semiconductor component with plate capacitor structure

Field-effect-controllable semiconductor component and method for producing the semiconductor component

Semiconductor device and method of manufacture thereof

Molded semiconductor package with backside die metallization

Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it

Semiconductor device and method of manufacture thereof

Method for forming a channel zone of a transistor and NMOS transistor

Trench transistor having a doped semiconductor region

Lateral trench transistor, as well as a method for its production

INFINEON TECHNOLOGIES AUSTRIA AG

Signal transmission arrangement

Charge-compensation semiconductor device and a manufacturing method therefor

Super junction semiconductor device with field extension zones

Super junction semiconductor device having columnar super junction regions extending into a drift layer

Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body

Electronic device and method of manufacturing the same

WAHL UWE

High voltage resistance coupling structure

Power semiconductor component with plate capacitor structure having an edge plate electrically connected to source or drain potential

Power semiconductor component with plate capacitor structure and edge termination

High voltage resistance coupling structure

FRAUNHOFER GES FORSCHUNG

Power MOS element and method for producing the same

Power MOS element and method for producing the same

HIRLER FRANZ

Super junction semiconductor device comprising a cell area and an edge area

Lateral trench transistor, as well as a method for its production

KERBER MARTIN

Signal transmission arrangement

High voltage semiconductor devices and methods of forming the same

KANSCHAT PETER

Signal transmission arrangement

WILLKOFER STEFAN

Semiconductor device and method of manufacture thereof

INFINEON TECHNOLGIES AG

Compensation component and process for producing the component

INFINEON TECHNOLOGIES DRESDEN GMBH

Semiconductor device with vertical transistor channels and a compensation structure

MAUDER ANTON

Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body

INFINEON TECH DRESDEN GMBH & CO KG

Method for producing a semiconductor arrangement

FELDTKELLER MARTIN

Semiconductor component with regions electrically insulated from one another and method for making a semiconductor component