Inventor

FEEZELL DANIEL

US17 patents

⚠️ This page may combine multiple inventors who share the name “FEEZELL DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FEEZELL DANIEL

UNM RAINFOREST INNOVATIONS

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Method of making heteroepitaxial structures and device formed by the method

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Method of making heteroepitaxial structures and device formed by the method

Method of forming a seed area and growing a heteroepitaxial layer on the seed area

Device with heteroepitaxial structure made using a growth mask

Devices comprising distributed bragg reflectors and methods of making the devices

Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips

Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips

Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures

Atomic force microscopy based on nanowire tips for high aspect ratio nanoscale metrology/confocal microscopy

STC UNM

Method of making a heteroepitaxial layer on a seed area

Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

LEE SEUNG-CHANG

Gate-all-around metal-oxide-semiconductor transistors with gate oxides

Gate-all-around metal-oxide-semiconductor transistors with gate oxides

BRUECK STEVEN R J

Device with heteroepitaxial structure made using a growth mask