Inventor

XU JEFF J

TW59 patents

⚠️ This page may combine multiple inventors who share the name “XU JEFF J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XU JEFF J

TAIWAN SEMICONDUCTOR MFG

Method of making a FinFET device

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Method of fabrication of a FinFET element

Integrated circuit layout design

Storage nitride encapsulation for non-planar sonos NAND flash charge retention

Method of pitch halving

Integrated circuit layout design

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Method for fabricating a strained structure

Method for forming epitaxial feature

Non-uniformity reduction in semiconductor planarization

Metal gate stress film for mobility enhancement in FinFET device

Method for reducing interfacial layer thickness for high-k and metal gate stack

Techniques providing metal gate devices with multiple barrier layers

Method of forming epi film in substrate trench

Non-uniformity reduction in semiconductor planarization

Methods of forming integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD

Method for fabricating a strained structure and structure formed

Techniques providing metal gate devices with multiple barrier layers

Integrated circuit transistor structure with high germanium concentration SiGe stressor

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Techniques providing metal gate devices with multiple barrier layers

Device having EPI film in substrate trench

Method for fabricating a strained structure and structure formed

Method for fabricating a strained structure and structure formed

Method for fabricating a strained structure and structure formed

Method for fabricating a strained structure and structure formed

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Integrated circuit transistor structure with high germanium concentration SiGe stressor

Techniques providing metal gate devices with multiple barrier layers

Method for fabricating a strained structure and structure formed

XU JEFF J

Method of forming epi film in substrate trench

Metal gate device with low temperature oxygen scavenging

Metal gate transistor, integrated circuits, systems, and fabrication methods thereof

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Semiconductor device with strained channels induced by high-k capping metal layers

FinFET semiconductor device with germanium (GE) fins

Metal gate stress film for mobility enhancement in FinFET device

Methods and apparatus of fluorine passivation

YAO LIANG-GI

Method for reducing interfacial layer thickness for high-k and metal gate stack

Method for reducing interfacial layer thickness for high-K and metal gate stack

Method of forming semiconductor structure

FANG ZIWEI

Self-aligned source and drain structures and method of manufacturing same

Method of manufacturing source/drain structures

LEE TSUNG-LIN

Method for fabricating a strained structure

CHANG CHIH-HAO

Method for forming high germanium concentration SiGe stressor

LIN CHIN-HSIANG

Source/drain stressor having enhanced carrier mobility manufacturing same

SHIEH MING-FENG

Method of fabrication of a semiconductor device having reduced pitch

Yu xiong-fei

Techniques providing metal gate devices with multiple barrier layers