Inventor
CHANG CHAO-CHING
TW18 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHAO-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS10043841B1Aug 7, 2018
Image sensor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US11373971B2Jun 28, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10134790B1Nov 20, 2018
Image sensor and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations82
US10325949B2Jun 18, 2019
Image Sensor Device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12068271B2Aug 20, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11756913B2Sep 12, 2023
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10497729B2Dec 3, 2019
Image sensor having conductive layer and protective layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10062656B2Aug 28, 2018
Composite bond structure in stacked semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12433059B2Sep 30, 2025
Composite etch stop layers for sensor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749760B2Sep 5, 2023
Composite etch stop layers for sensor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335817B2May 17, 2022
Composite etch stop layers for sensor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189654B2Nov 30, 2021
Manufacturing methods of semiconductor image sensor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11652124B2May 16, 2023
Isolation structure having an air gap to reduce pixel crosstalk
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10050102B2Aug 14, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US10186454B2Jan 22, 2019
Semiconductor structure having etch stop layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10038000B2Jul 31, 2018
Memory cell and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations49