Inventor
OSBORNE RANDY
US13 patents
⚠️ This page may combine multiple inventors who share the name “OSBORNE RANDY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS11762732B2Sep 19, 2023
Memory error detection and correction
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11204826B2Dec 21, 2021
Memory error detection and correction
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations85
US10991756B2Apr 27, 2021
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations85
US11404476B2Aug 2, 2022
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11792999B2Oct 17, 2023
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10878872B2Dec 29, 2020
Random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US12389607B2Aug 12, 2025
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12229003B2Feb 18, 2025
Memory error detection and correction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133044B2Sep 28, 2021
Interleaved routing for MRAM cell selection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
INTEL CORP
4 patentsUS7404055B2Jul 22, 2008
Memory transfer with early access to critical portion
INTEL CORP4 citations57
US10558570B2Feb 11, 2020
Concurrent accesses of asymmetrical memory sources
INTEL CORP0 citations51
US12242315B2Mar 4, 2025
Thermal management in horizontally or vertically stacked dies
INTEL CORP0 citations44
US10304418B2May 28, 2019
Operating system transparent system memory abandonment
INTEL CORP0 citations40