Inventor
CHEN CHIEH-FANG
TW36 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHIEH-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
12 patentsUS7879645B2Feb 1, 2011
Fill-in etching free pore device
MACRONIX INT CO LTD31 citations93
US7884343B2Feb 8, 2011
Phase change memory cell with filled sidewall memory element and method for fabricating the same
MACRONIX INT CO LTD20 citations92
US7701750B2Apr 20, 2010
Phase change device having two or more substantial amorphous regions in high resistance state
MACRONIX INT CO LTD21 citations92
US8772747B2Jul 8, 2014
Composite target sputtering for forming doped phase change materials
MACRONIX INT CO LTD8 citations84
US8363463B2Jan 29, 2013
Phase change memory having one or more non-constant doping profiles
MACRONIX INT CO LTD16 citations84
US7510929B2Mar 31, 2009
Method for making memory cell device
MACRONIX INT CO LTD9 citations84
US10811427B1Oct 20, 2020
Semiconductor structure and manufacturing method thereof
MACRONIX INT CO LTD4 citations73
US9330764B2May 3, 2016
Array fanout pass transistor structure
MACRONIX INT CO LTD4 citations71
US7897954B2Mar 1, 2011
Dielectric-sandwiched pillar memory device
MACRONIX INT CO LTD2 citations63
US7514367B2Apr 7, 2009
Method for manufacturing a narrow structure on an integrated circuit
MACRONIX INT CO LTD3 citations63
US7483316B2Jan 27, 2009
Method and apparatus for refreshing programmable resistive memory
MACRONIX INT CO LTD3 citations63
US10685971B2Jun 16, 2020
Three dimensional memory device and method for fabricating the same
MACRONIX INT CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS12501700B2Dec 16, 2025
Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408347B2Sep 2, 2025
Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12245432B2Mar 4, 2025
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12108605B2Oct 1, 2024
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11937426B2Mar 19, 2024
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
LEE MING-HSIU
4 patentsUS8198619B2Jun 12, 2012
Phase change memory cell structure
LEE MING-HSIU8 citations84
US8064247B2Nov 22, 2011
Rewritable memory device based on segregation/re-absorption
LEE MING-HSIU5 citations63
US8779408B2Jul 15, 2014
Phase change memory cell structure
LEE MING-HSIU3 citations62
US8537609B2Sep 17, 2013
Memory device and method of operating the same
LEE MING-HSIU1 citations52
IBM
4 patentsUS7932507B2Apr 26, 2011
Current constricting phase change memory element structure
IBM14 citations84
US7745807B2Jun 29, 2010
Current constricting phase change memory element structure
IBM11 citations84
US7491573B1Feb 17, 2009
Phase change materials for applications that require fast switching and high endurance
IBM12 citations84
US8378328B2Feb 19, 2013
Phase change memory random access device using single-element phase change material
IBM5 citations73