Inventor
SUN JONATHAN ZANHONG
US25 patents
⚠️ This page may combine multiple inventors who share the name “SUN JONATHAN ZANHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
22 patentsUS6256223B1Jul 3, 2001
Current-induced magnetic switching device and memory including the same
IBM369 citations99
US5841692ANov 24, 1998
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
IBM261 citations99
US5650958AJul 22, 1997
Magnetic tunnel junctions with controlled magnetic response
IBM521 citations99
US8008095B2Aug 30, 2011
Methods for fabricating contacts to pillar structures in integrated circuits
IBM56 citations98
US7602000B2Oct 13, 2009
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
IBM58 citations98
US7313013B2Dec 25, 2007
Spin-current switchable magnetic memory element and method of fabricating the memory element
IBM63 citations98
US6130814AOct 10, 2000
Current-induced magnetic switching device and memory including the same
IBM104 citations98
US7376006B2May 20, 2008
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
IBM138 citations97
US6936840B2Aug 30, 2005
Phase-change memory cell and method of fabricating the phase-change memory cell
IBM290 citations97
US5792569AAug 11, 1998
Magnetic devices and sensors based on perovskite manganese oxide materials
IBM156 citations97
US10777247B1Sep 15, 2020
Spin-based storage element
IBM14 citations86
US7894245B2Feb 22, 2011
Spin-current switchable magnetic memory element and method of fabricating the memory element
IBM9 citations84
US7943399B2May 17, 2011
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
IBM4 citations74
US11778921B2Oct 3, 2023
Double magnetic tunnel junction device
IBM2 citations73
US11316104B2Apr 26, 2022
Inverted wide base double magnetic tunnel junction device
IBM2 citations73
US11171283B2Nov 9, 2021
Modified double magnetic tunnel junction structure suitable for BEOL integration
IBM2 citations73
US7459266B2Dec 2, 2008
Phase-change memory cell and method of fabricating the phase-change memory cell
IBM7 citations71
US8860105B2Oct 14, 2014
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
IBM2 citations63
US12527231B2Jan 13, 2026
MRAM structure with chiral spin-orbit-torque metal electrode
IBM0 citations62
US11972785B2Apr 30, 2024
MRAM structure with enhanced magnetics using seed engineering
IBM0 citations62
US11574667B2Feb 7, 2023
Resonant synthetic antiferromagnet reference layered structure
IBM0 citations56
US11823723B2Nov 21, 2023
Memory device with spin-harvesting structure
IBM0 citations45
SUN JONATHAN ZANHONG
3 patentsUS8558332B2Oct 15, 2013
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
SUN JONATHAN ZANHONG2 citations61
US8310863B2Nov 13, 2012
Spin-current switchable magnetic memory element and method of fabricating the memory element
SUN JONATHAN ZANHONG3 citations61
US8861262B2Oct 14, 2014
Spin-current switchable magnetic memory element and method of fabricating the memory element
SUN JONATHAN ZANHONG0 citations51