Inventor

LEENDERTZ CASPAR

DE42 patents

⚠️ This page may combine multiple inventors who share the name “LEENDERTZ CASPAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEENDERTZ CASPAR

INFINEON TECHNOLOGIES AG

SiC trench transistor device and methods of manufacturing thereof

Shielding structure for SiC devices

Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component

Silicon carbide semiconductor device and method of manufacturing

Silicon carbide device with an implantation tail compensation region

Power semiconductor device with dV/dt controllability and cross-trench arrangement

Silicon carbide device with trench gate

Semiconductor component having a SiC semiconductor body

Method of manufacturing silicon carbide semiconductor devices

Semiconductor device including trench structure and manufacturing method

Silicon carbide device with compensation region and method of manufacturing

Power transistor with integrated Schottky diode

Silicon carbide field-effect transistor including shielding areas

Power semiconductor switch having a cross-trench structure

Semiconductor component having a SiC semiconductor body

IGBT with dV/dt controllability

Semiconductor device including trench structure and manufacturing method

Method of manufacturing silicon carbide semiconductor devices

Silicon carbide field-effect transistor including shielding areas

Power semiconductor device having a cross-trench arrangement

SiC power semiconductor device with integrated Schottky junction

IGBT with dV/dt controllability

SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof

Failure structure in semiconductor device

Semiconductor device including junction material in a trench and manufacturing method

SiC device and methods of manufacturing thereof

Silicon carbide device with a stripe-shaped trench gate structure

Method of producing a silicon carbide device with a trench gate

Silicon carbide device with Schottky contact

Semiconductor device including current spread region

Semiconductor device including current spread region

Silicon carbide device with compensation layer and method of manufacturing

Semiconductor device including trench structures and manufacturing method

SiC power semiconductor device with integrated body diode

SiC devices with shielding structure

Semiconductor device fabricated using channeling implant

Ion beam implantation method and semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device including a transistor with one or more barrier regions

Semiconductor device comprising a barrier region

Power semiconductor device with dV/dt controllability

Semiconductor device having a transistor with trenches and mesas

INFINEON TECH DRESDEN GMBH & CO KG

Power semiconductor switch with improved controllability