P

Inventor

LEE WEI JU

TW25 patents

Patents

25 patents
US11177344B2Nov 16, 2021

Multi-gate device with air gap spacer and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11764262B2Sep 19, 2023

Multi-gate device with air gap spacer and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532627B2Dec 20, 2022

Source/drain contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11489063B2Nov 1, 2022

Method of manufacturing a source/drain feature in a multi-gate semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11469332B2Oct 11, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309240B2Apr 19, 2022

Conductive rail structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11276637B2Mar 15, 2022

Barrier-free interconnect structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11037925B2Jun 15, 2021

Structure and method of integrated circuit having decouple capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10964816B2Mar 30, 2021

Method and device for boosting performance of FinFETs via strained spacer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12490476B2Dec 2, 2025

Method and device for boosting performance of FinFETs via strained spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349418B2Jul 1, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300720B2May 13, 2025

Multi-gate device with air gap spacer and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211790B2Jan 28, 2025

Conductive rail structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199170B2Jan 14, 2025

Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148830B2Nov 19, 2024

Method and device for boosting performance of FinFETs via strained spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094938B2Sep 17, 2024

Semiconductor device with low resistances and methods of forming such

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12009293B2Jun 11, 2024

Barrier-free interconnect structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009408B2Jun 11, 2024

Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929409B2Mar 12, 2024

Semiconductor device with improved source and drain contact area and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11837538B2Dec 5, 2023

Conductive rail structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11756959B2Sep 12, 2023

Structure and method of integrated circuit having decouple capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11664451B2May 30, 2023

Method and device for boosting performance of FinFETs via strained spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476342B1Oct 18, 2022

Semiconductor device with improved source and drain contact area and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12501660B2Dec 16, 2025

Field effect transistor with merged epitaxy backside cut and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11855143B2Dec 26, 2023

Semiconductor structures and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52