Inventor
CHUANG LI-YANG
TW17 patents
Patents
17 patentsUS11296082B2Apr 5, 2022
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11688736B2Jun 27, 2023
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11575034B2Feb 7, 2023
Back end of line nanowire power switch transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11245028B2Feb 8, 2022
Isolation structures of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10971609B2Apr 6, 2021
Back end of line nanowire power switch transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10964816B2Mar 30, 2021
Method and device for boosting performance of FinFETs via strained spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11217676B1Jan 4, 2022
Antenna-free high-k gate dielectric for a gate-all-around transistor and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12490476B2Dec 2, 2025
Method and device for boosting performance of FinFETs via strained spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396191B2Aug 19, 2025
Isolation structures of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317528B2May 27, 2025
Gate isolation feature and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166036B2Dec 10, 2024
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148830B2Nov 19, 2024
Method and device for boosting performance of FinFETs via strained spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062714B2Aug 13, 2024
Back end of line nanowire power switch transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051738B2Jul 30, 2024
Isolation structures of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12021136B2Jun 25, 2024
Gate isolation feature and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11664451B2May 30, 2023
Method and device for boosting performance of FinFETs via strained spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11799019B2Oct 24, 2023
Gate isolation feature and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52