P

Inventor

KANO TAKASHI

JP45 patents
⚠️ This page may combine multiple inventors who share the name “KANO TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANYO ELECTRIC CO

24 patents
US6319742B1Nov 20, 2001

Method of forming nitride based semiconductor layer

SANYO ELECTRIC CO113 citations99
US6720196B2Apr 13, 2004

Nitride-based semiconductor element and method of forming nitride-based semiconductor

SANYO ELECTRIC CO97 citations98
US6388275B1May 14, 2002

Compound semiconductor device based on gallium nitride

SANYO ELECTRIC CO118 citations98
US6649942B2Nov 18, 2003

Nitride-based semiconductor light-emitting device

SANYO ELECTRIC CO68 citations96
US6162656ADec 19, 2000

Manufacturing method of light emitting device

SANYO ELECTRIC CO48 citations95
US5990496ANov 23, 1999

Light emitting device with cap layer

SANYO ELECTRIC CO78 citations95
US7977701B2Jul 12, 2011

Semiconductor device with SiO2 film formed on side surface of nitride based semiconductor layer

SANYO ELECTRIC CO14 citations93
US6566677B2May 20, 2003

Nitride-based semiconductor device and manufacturing method thereof

SANYO ELECTRIC CO16 citations92
US6836496B1Dec 28, 2004

Semiconductor laser device

SANYO ELECTRIC CO16 citations84
US7388234B2Jun 17, 2008

Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer

SANYO ELECTRIC CO5 citations74
US6954478B2Oct 11, 2005

Nitride-based semiconductor laser device

SANYO ELECTRIC CO7 citations74
US6872982B2Mar 29, 2005

Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer

SANYO ELECTRIC CO4 citations74
US6872967B2Mar 29, 2005

Nitride-based semiconductor device and manufacturing method thereof

SANYO ELECTRIC CO6 citations73
US7768030B2Aug 3, 2010

Nitride based semiconductor device with film for preventing short circuiting

SANYO ELECTRIC CO2 citations63
US7567605B2Jul 28, 2009

Semiconductor laser device and method of fabricating the same

SANYO ELECTRIC CO3 citations63
US7518204B2Apr 14, 2009

Semiconductor device

SANYO ELECTRIC CO4 citations63
US7485902B2Feb 3, 2009

Nitride-based semiconductor light-emitting device

SANYO ELECTRIC CO5 citations63
US7453102B2Nov 18, 2008

Nitride-based semiconductor laser device

SANYO ELECTRIC CO2 citations63
US7405096B2Jul 29, 2008

Manufacturing method of nitride semiconductor device and nitride semiconductor device

SANYO ELECTRIC CO2 citations63
US7088755B2Aug 8, 2006

Nitride-base semiconductor laser device

SANYO ELECTRIC CO5 citations63
US6914922B2Jul 5, 2005

Nitride based semiconductor light emitting device and nitride based semiconductor laser device

SANYO ELECTRIC CO6 citations63
US6821807B2Nov 23, 2004

Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device

SANYO ELECTRIC CO2 citations63
USRE42074EJan 25, 2011

Manufacturing method of light emitting device

SANYO ELECTRIC CO2 citations62
US7807490B2Oct 5, 2010

Manufacturing method of nitride semiconductor device and nitride semiconductor device

SANYO ELECTRIC CO0 citations52

CANON KK

3 patents

DAIDO STEEL CO LTD

3 patents

KANTO ISHI PHARMA CO LTD

2 patents

PANASONIC IP MAN CO LTD

2 patents

SAITO ISAMU

2 patents

KANO TAKASHI

2 patents

HITACHI LTD

1 patent

FDK CORP

1 patent

TOYO INK MFG CO

1 patent

DIADO STEEL CO LTD

1 patent

ISEKI KAIHATSU KOKI

1 patent

ISHIKURA RYOHEI

1 patent

YAMAGUCHI TSUTOMU

1 patent