Inventor
CHANG MIKE F
US50 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MIKE F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SILICONIX INC
30 patentsUS6069043AMay 30, 2000
Method of making punch-through field effect transistor
SILICONIX INC127 citations99
US5767578AJun 16, 1998
Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation
SILICONIX INC176 citations99
US5757081AMay 26, 1998
Surface mount and flip chip technology for total integrated circuit isolation
SILICONIX INC224 citations99
US5753529AMay 19, 1998
Surface mount and flip chip technology for total integrated circuit isolation
SILICONIX INC183 citations99
US5689128ANov 18, 1997
High density trenched DMOS transistor
SILICONIX INC242 citations99
US5639676AJun 17, 1997
Trenched DMOS transistor fabrication having thick termination region oxide
SILICONIX INC138 citations99
US5592005AJan 7, 1997
Punch-through field effect transistor
SILICONIX INC171 citations99
US5578851ANov 26, 1996
Trenched DMOS transistor having thick field oxide in termination region
SILICONIX INC136 citations99
US5981344ANov 9, 1999
Trench field effect transistor with reduced punch-through susceptibility and low RDSon
SILICONIX INC117 citations98
US5917216AJun 29, 1999
Trenched field effect transistor with PN depletion barrier
SILICONIX INC164 citations98
US5532179AJul 2, 1996
Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
SILICONIX INC112 citations98
US5474943ADec 12, 1995
Method for fabricating a short channel trenched DMOS transistor
SILICONIX INC116 citations98
US5316959AMay 31, 1994
Trenched DMOS transistor fabrication using six masks
SILICONIX INC117 citations98
US5929481AJul 27, 1999
High density trench DMOS transistor with trench bottom implant
SILICONIX INC254 citations97
US5910669AJun 8, 1999
Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
SILICONIX INC62 citations96
US5629543AMay 13, 1997
Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
SILICONIX INC165 citations96
US5341011AAug 23, 1994
Short channel trenched DMOS transistor
SILICONIX INC94 citations96
US5132753AJul 21, 1992
Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
SILICONIX INC73 citations96
US5821583AOct 13, 1998
Trenched DMOS transistor with lightly doped tub
SILICONIX INC97 citations95
US5468982ANov 21, 1995
Trenched DMOS transistor with channel block at cell trench corners
SILICONIX INC89 citations95
US5426325AJun 20, 1995
Metal crossover in high voltage IC with graduated doping control
SILICONIX INC41 citations93
US6444527B1Sep 3, 2002
Method of operation of punch-through field effect transistor
SILICONIX INC29 citations92
US5998834ADec 7, 1999
Long channel trench-gated power MOSFET having fully depleted body region
SILICONIX INC26 citations92
US6277695B1Aug 21, 2001
Method of forming vertical planar DMOSFET with self-aligned contact
SILICONIX INC52 citations91
US5439842AAug 8, 1995
Low temperature oxide layer over field implant mask
SILICONIX INC30 citations90
US5486772AJan 23, 1996
Reliability test method for semiconductor trench devices
SILICONIX INC32 citations89
US5750416AMay 12, 1998
Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance
SILICONIX INC10 citations73
US5328866AJul 12, 1994
Low temperature oxide layer over field implant mask
SILICONIX INC8 citations71
US6090716AJul 18, 2000
Method of fabricating a field effect transistor
SILICONIX INC9 citations68
US5923979AJul 13, 1999
Planar DMOS transistor fabricated by a three mask process
SILICONIX INC4 citations63
GEN ELECTRIC
17 patentsUS4795716AJan 3, 1989
Method of making a power IC structure with enhancement and/or CMOS logic
GEN ELECTRIC59 citations96
US4810665AMar 7, 1989
Semiconductor device and method of fabrication
GEN ELECTRIC26 citations90
US4803533AFeb 7, 1989
IGT and MOSFET devices having reduced channel width
GEN ELECTRIC44 citations90
US4159215AJun 26, 1979
Droplet migration doping using reactive carriers and dopants
GEN ELECTRIC10 citations74
US4042448AAug 16, 1977
Post TGZM surface etch
GEN ELECTRIC11 citations74
US4021269AMay 3, 1977
Post diffusion after temperature gradient zone melting
GEN ELECTRIC9 citations74
US4006040AFeb 1, 1977
Semiconductor device manufacture
GEN ELECTRIC11 citations74
US3998661ADec 21, 1976
Uniform migration of an annular shaped molten zone through a solid body
GEN ELECTRIC10 citations74
US3998653ADec 21, 1976
Method for cleaning semiconductor devices
GEN ELECTRIC12 citations74
US4235650ANov 25, 1980
Open tube aluminum diffusion
GEN ELECTRIC14 citations72
US4188245AFeb 12, 1980
Selective open tube aluminum diffusion
GEN ELECTRIC9 citations72
US4108685AAug 22, 1978
Semiconductor device manufacture
GEN ELECTRIC4 citations63
US4076559AFeb 28, 1978
Temperature gradient zone melting through an oxide layer
GEN ELECTRIC5 citations63
US4040868AAug 9, 1977
Semiconductor device manufacture
GEN ELECTRIC3 citations63
US4168992ASep 25, 1979
Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring
GEN ELECTRIC5 citations59
US4239560ADec 16, 1980
Open tube aluminum oxide disc diffusion
GEN ELECTRIC4 citations57
US4233934ANov 18, 1980
Guard ring for TGZM processing
GEN ELECTRIC1 citations51