P

Inventor

CHANG MIKE F

US50 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MIKE F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SILICONIX INC

30 patents
US6069043AMay 30, 2000

Method of making punch-through field effect transistor

SILICONIX INC127 citations99
US5767578AJun 16, 1998

Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation

SILICONIX INC176 citations99
US5757081AMay 26, 1998

Surface mount and flip chip technology for total integrated circuit isolation

SILICONIX INC224 citations99
US5753529AMay 19, 1998

Surface mount and flip chip technology for total integrated circuit isolation

SILICONIX INC183 citations99
US5689128ANov 18, 1997

High density trenched DMOS transistor

SILICONIX INC242 citations99
US5639676AJun 17, 1997

Trenched DMOS transistor fabrication having thick termination region oxide

SILICONIX INC138 citations99
US5592005AJan 7, 1997

Punch-through field effect transistor

SILICONIX INC171 citations99
US5578851ANov 26, 1996

Trenched DMOS transistor having thick field oxide in termination region

SILICONIX INC136 citations99
US5981344ANov 9, 1999

Trench field effect transistor with reduced punch-through susceptibility and low RDSon

SILICONIX INC117 citations98
US5917216AJun 29, 1999

Trenched field effect transistor with PN depletion barrier

SILICONIX INC164 citations98
US5532179AJul 2, 1996

Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof

SILICONIX INC112 citations98
US5474943ADec 12, 1995

Method for fabricating a short channel trenched DMOS transistor

SILICONIX INC116 citations98
US5316959AMay 31, 1994

Trenched DMOS transistor fabrication using six masks

SILICONIX INC117 citations98
US5929481AJul 27, 1999

High density trench DMOS transistor with trench bottom implant

SILICONIX INC254 citations97
US5910669AJun 8, 1999

Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof

SILICONIX INC62 citations96
US5629543AMay 13, 1997

Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness

SILICONIX INC165 citations96
US5341011AAug 23, 1994

Short channel trenched DMOS transistor

SILICONIX INC94 citations96
US5132753AJul 21, 1992

Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs

SILICONIX INC73 citations96
US5821583AOct 13, 1998

Trenched DMOS transistor with lightly doped tub

SILICONIX INC97 citations95
US5468982ANov 21, 1995

Trenched DMOS transistor with channel block at cell trench corners

SILICONIX INC89 citations95
US5426325AJun 20, 1995

Metal crossover in high voltage IC with graduated doping control

SILICONIX INC41 citations93
US6444527B1Sep 3, 2002

Method of operation of punch-through field effect transistor

SILICONIX INC29 citations92
US5998834ADec 7, 1999

Long channel trench-gated power MOSFET having fully depleted body region

SILICONIX INC26 citations92
US6277695B1Aug 21, 2001

Method of forming vertical planar DMOSFET with self-aligned contact

SILICONIX INC52 citations91
US5439842AAug 8, 1995

Low temperature oxide layer over field implant mask

SILICONIX INC30 citations90
US5486772AJan 23, 1996

Reliability test method for semiconductor trench devices

SILICONIX INC32 citations89
US5750416AMay 12, 1998

Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance

SILICONIX INC10 citations73
US5328866AJul 12, 1994

Low temperature oxide layer over field implant mask

SILICONIX INC8 citations71
US6090716AJul 18, 2000

Method of fabricating a field effect transistor

SILICONIX INC9 citations68
US5923979AJul 13, 1999

Planar DMOS transistor fabricated by a three mask process

SILICONIX INC4 citations63

GEN ELECTRIC

17 patents
US4795716AJan 3, 1989

Method of making a power IC structure with enhancement and/or CMOS logic

GEN ELECTRIC59 citations96
US4810665AMar 7, 1989

Semiconductor device and method of fabrication

GEN ELECTRIC26 citations90
US4803533AFeb 7, 1989

IGT and MOSFET devices having reduced channel width

GEN ELECTRIC44 citations90
US4159215AJun 26, 1979

Droplet migration doping using reactive carriers and dopants

GEN ELECTRIC10 citations74
US4042448AAug 16, 1977

Post TGZM surface etch

GEN ELECTRIC11 citations74
US4021269AMay 3, 1977

Post diffusion after temperature gradient zone melting

GEN ELECTRIC9 citations74
US4006040AFeb 1, 1977

Semiconductor device manufacture

GEN ELECTRIC11 citations74
US3998661ADec 21, 1976

Uniform migration of an annular shaped molten zone through a solid body

GEN ELECTRIC10 citations74
US3998653ADec 21, 1976

Method for cleaning semiconductor devices

GEN ELECTRIC12 citations74
US4235650ANov 25, 1980

Open tube aluminum diffusion

GEN ELECTRIC14 citations72
US4188245AFeb 12, 1980

Selective open tube aluminum diffusion

GEN ELECTRIC9 citations72
US4108685AAug 22, 1978

Semiconductor device manufacture

GEN ELECTRIC4 citations63
US4076559AFeb 28, 1978

Temperature gradient zone melting through an oxide layer

GEN ELECTRIC5 citations63
US4040868AAug 9, 1977

Semiconductor device manufacture

GEN ELECTRIC3 citations63
US4168992ASep 25, 1979

Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring

GEN ELECTRIC5 citations59
US4239560ADec 16, 1980

Open tube aluminum oxide disc diffusion

GEN ELECTRIC4 citations57
US4233934ANov 18, 1980

Guard ring for TGZM processing

GEN ELECTRIC1 citations51

ALPHA & OMEGA SEMICONDUCTOR

2 patents

SILICONIX INORPORATED

1 patent