Inventor

PATEL VISHNUBHAI V

US32 patents

⚠️ This page may combine multiple inventors who share the name “PATEL VISHNUBHAI V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PATEL VISHNUBHAI V

IBM

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

Silicon/carbon protection of metallic magnetic structures

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device

Diamond-like carbon for use in VLSI and ULSI interconnect systems

High area capacitor formation using material dependent etching

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Fluorinated diamond-like carbon protective coating for magnetic recording media devices

Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop

Magnetic head slider having a protective coating thereon

Enhanced T-gate structure for modulation doped field effect transistors

Method for fabricating an ultralow dielectric constant material

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device

Enhanced T-gate structure for modulation doped field effect transistors

Structures with improved adhesion to Si and C containing dielectrics and method for preparing the same

Diamond-like carbon write-read optical storage memory

Amorphous write-read optical storage memory

Copper device and use thereof with semiconductor devices

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Materials containing voids with void size controlled on the nanometer scale

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

Erosion/corrosion resistant diaphragm

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

Diffusion barrier with low dielectric constant and semiconductor device containing same

Tetraselenofulvalene, dithiodiselenofulvalene and the TCNQ salts thereof

Heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs and a method of fabricating the same

Heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs and a method of fabricating the same

Dithiobenzoate 4,5-dicyano-1,3-(dithiolidene-2-yl)methylene

Heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs and a method of fabricating the same

GATES STEPHEN M

Materials containing voids with void size controlled on the nanometer scale

Materials containing voids with void size controlled on the nanometer scale