Inventor
GALEWSKI CARL
US17 patents
⚠️ This page may combine multiple inventors who share the name “GALEWSKI CARL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AIXTRON SE
4 patentsUS9831466B2Nov 28, 2017
Method for depositing a multi-layer moisture barrier on electronic devices and electronic devices protected by a multi-layer moisture barrier
AIXTRON SE2 citations72
US9443702B2Sep 13, 2016
Methods for plasma processing
AIXTRON SE2 citations61
US10526708B2Jan 7, 2020
Methods for forming thin protective and optical layers on substrates
AIXTRON SE1 citations60
US10294562B2May 21, 2019
Exhaust manifold in a CVD reactor
AIXTRON SE0 citations33
AIXTRON INC
4 patentsUS9096932B2Aug 4, 2015
Methods for plasma processing
AIXTRON INC1 citations61
US9096933B2Aug 4, 2015
Methods for plasma processing
AIXTRON INC3 citations61
US9299956B2Mar 29, 2016
Method for deposition of high-performance coatings and encapsulated electronic devices
AIXTRON INC2 citations60
US9359674B2Jun 7, 2016
Apparatus and method for dielectric deposition
AIXTRON INC0 citations50
GENUS INC
3 patentsUS6638859B2Oct 28, 2003
Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
GENUS INC154 citations99
US6503330B1Jan 7, 2003
Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
GENUS INC616 citations99
US6897119B1May 24, 2005
Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
GENUS INC46 citations92
SAVAS STEPHEN EDWARD
3 patentsADVANCED MICRO DEVICES INC
2 patentsUS6368954B1Apr 9, 2002
Method of copper interconnect formation using atomic layer copper deposition
ADVANCED MICRO DEVICES INC312 citations97
US6538327B1Mar 25, 2003
Method of copper interconnect formation using atomic layer copper deposition and a device thereby formed
ADVANCED MICRO DEVICES INC16 citations90