Inventor
ONAI TAKAHIRO
JP22 patents
⚠️ This page may combine multiple inventors who share the name “ONAI TAKAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
15 patentsUS5962880AOct 5, 1999
Heterojunction bipolar transistor
HITACHI LTD154 citations98
US6004865ADec 21, 1999
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD45 citations96
US5523602AJun 4, 1996
Multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD61 citations96
US5598015AJan 28, 1997
Hetero-junction bipolar transistor and semiconductor devices using the same
HITACHI LTD20 citations93
US6667199B2Dec 23, 2003
Semiconductor device having a replacement gate type field effect transistor and its manufacturing method
HITACHI LTD31 citations92
US6313012B1Nov 6, 2001
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD30 citations92
US6524903B2Feb 25, 2003
Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution
HITACHI LTD33 citations91
US5387545AFeb 7, 1995
Impurity diffusion method
HITACHI LTD21 citations88
US5430317AJul 4, 1995
Semiconductor device
HITACHI LTD10 citations74
US5424575AJun 13, 1995
Semiconductor device for SOI structure having lead conductor suitable for fine patterning
HITACHI LTD7 citations74
US5177584AJan 5, 1993
Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
HITACHI LTD8 citations74
US5324983AJun 28, 1994
Semiconductor device
HITACHI LTD10 citations73
US5237200AAug 17, 1993
Semiconductor bipolar transistor with concentric regions
HITACHI LTD13 citations73
US5109263AApr 28, 1992
Semiconductor device with optimal distance between emitter and trench isolation
HITACHI LTD11 citations73
US7405588B2Jul 29, 2008
Device and data processing method employing the device
HITACHI LTD2 citations63
RENESAS TECH CORP
5 patentsUS6982465B2Jan 3, 2006
Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics
RENESAS TECH CORP121 citations98
US6878606B2Apr 12, 2005
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
RENESAS TECH CORP20 citations92
US7042051B2May 9, 2006
Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region
RENESAS TECH CORP29 citations91
US7042055B2May 9, 2006
Semiconductor device and manufacturing thereof
RENESAS TECH CORP7 citations74
US7029988B2Apr 18, 2006
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
RENESAS TECH CORP10 citations73