Inventor
SCHRANTZ GREGORY A
US10 patents
Patents
10 patentsUS5552345ASep 3, 1996
Die separation method for silicon on diamond circuit structures
HARRIS CORP104 citations97
US5272104ADec 21, 1993
Bonded wafer process incorporating diamond insulator
HARRIS CORP122 citations97
US5650639AJul 22, 1997
Integrated circuit with diamond insulator
HARRIS CORP50 citations95
US5561303AOct 1, 1996
Silicon on diamond circuit structure
HARRIS CORP54 citations95
US4912053AMar 27, 1990
Ion implanted JFET with self-aligned source and drain
HARRIS CORP53 citations95
US5120669AJun 9, 1992
Method of forming self-aligned top gate channel barrier region in ion-implanted JFET
HARRIS CORP23 citations92
US5008719AApr 16, 1991
Dual layer surface gate JFET having enhanced gate-channel breakdown voltage
HARRIS CORP22 citations92
US5118632AJun 2, 1992
Dual layer surface gate JFET having enhanced gate-channel breakdown voltage
HARRIS CORP15 citations73
US5027187AJun 25, 1991
Polycrystalline silicon ohmic contacts to group III-arsenide compound semiconductors
HARRIS CORP10 citations72
US4683485AJul 28, 1987
Technique for increasing gate-drain breakdown voltage of ion-implanted JFET
HARRIS CORP6 citations62