Inventor
LINN JACK H
US31 patents
⚠️ This page may combine multiple inventors who share the name “LINN JACK H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HARRIS CORP
21 patentsUS5849627ADec 15, 1998
Bonded wafer processing with oxidative bonding
HARRIS CORP178 citations99
US5569620AOct 29, 1996
Bonded wafer processing with metal silicidation
HARRIS CORP194 citations99
US5387555AFeb 7, 1995
Bonded wafer processing with metal silicidation
HARRIS CORP149 citations99
US5552345ASep 3, 1996
Die separation method for silicon on diamond circuit structures
HARRIS CORP104 citations97
US5272104ADec 21, 1993
Bonded wafer process incorporating diamond insulator
HARRIS CORP122 citations97
US5744852AApr 28, 1998
Bonded wafer
HARRIS CORP68 citations96
US5517047AMay 14, 1996
Bonded wafer processing
HARRIS CORP53 citations96
US5362667ANov 8, 1994
Bonded wafer processing
HARRIS CORP93 citations96
US5650639AJul 22, 1997
Integrated circuit with diamond insulator
HARRIS CORP50 citations95
US5547896AAug 20, 1996
Direct etch for thin film resistor using a hard mask
HARRIS CORP53 citations95
US5728624AMar 17, 1998
Bonded wafer processing
HARRIS CORP52 citations92
US5603779AFeb 18, 1997
Bonded wafer and method of fabrication thereof
HARRIS CORP35 citations92
US5833758ANov 10, 1998
Method for cleaning semiconductor wafers to improve dice to substrate solderability
HARRIS CORP19 citations91
US5451263ASep 19, 1995
Plasma cleaning method for improved ink brand permanency on IC packages with metallic parts
HARRIS CORP35 citations86
US5932022AAug 3, 1999
SC-2 based pre-thermal treatment wafer cleaning process
HARRIS CORP51 citations85
US5882423AMar 16, 1999
Plasma cleaning method for improved ink brand permanency on IC packages
HARRIS CORP18 citations80
US5526768AJun 18, 1996
Method for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereof
HARRIS CORP12 citations74
US5395774AMar 7, 1995
Methods for forming a transistor having an emitter with enhanced efficiency
HARRIS CORP9 citations74
US5837603ANov 17, 1998
Planarization method by use of particle dispersion and subsequent thermal flow
HARRIS CORP3 citations62
US5228330AJul 20, 1993
Hermetic IC package moisture tester
HARRIS CORP2 citations61
US5279850AJan 18, 1994
Gas phase chemical reduction of metallic branding layer of electronic circuit package for deposition of branding ink
HARRIS CORP6 citations60
INTERSIL INC
4 patentsUS7052973B2May 30, 2006
Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone
INTERSIL INC5 citations72
US6825532B2Nov 30, 2004
Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone
INTERSIL INC12 citations72
US7174626B2Feb 13, 2007
Method of manufacturing a plated electronic termination
INTERSIL INC4 citations61
US7223706B2May 29, 2007
Method for forming plasma enhanced deposited, fully oxidized PSG film
INTERSIL INC0 citations39
INTERSIL CORP
3 patentsUS6255195B1Jul 3, 2001
Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
INTERSIL CORP66 citations95
US6909146B1Jun 21, 2005
Bonded wafer with metal silicidation
INTERSIL CORP25 citations92
US6246090B1Jun 12, 2001
Power trench transistor device source region formation using silicon spacer
INTERSIL CORP43 citations92