Inventor
NGAN KENNY KING-TAI
US37 patents
Patents
37 patentsUS5746460AMay 5, 1998
End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector
APPLIED MATERIALS INC164 citations99
US6110836AAug 29, 2000
Reactive plasma etch cleaning of high aspect ratio openings
APPLIED MATERIALS INC257 citations98
US6945857B1Sep 20, 2005
Polishing pad conditioner and methods of manufacture and recycling
APPLIED MATERIALS INC111 citations97
US6051114AApr 18, 2000
Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
APPLIED MATERIALS INC304 citations97
US6346489B1Feb 12, 2002
Precleaning process for metal plug that minimizes damage to low-κ dielectric
APPLIED MATERIALS INC61 citations96
US6045666AApr 4, 2000
Aluminum hole filling method using ionized metal adhesion layer
APPLIED MATERIALS INC61 citations96
US5925225AJul 20, 1999
Method of producing smooth titanium nitride films having low resistivity
APPLIED MATERIALS INC41 citations96
US5707498AJan 13, 1998
Avoiding contamination from induction coil in ionized sputtering
APPLIED MATERIALS INC79 citations96
US7066795B2Jun 27, 2006
Polishing pad conditioner with shaped abrasive patterns and channels
APPLIED MATERIALS INC87 citations94
US6313042B1Nov 6, 2001
Cleaning contact with successive fluorine and hydrogen plasmas
APPLIED MATERIALS INC56 citations94
US7504008B2Mar 17, 2009
Refurbishment of sputtering targets
APPLIED MATERIALS INC33 citations93
US6420260B1Jul 16, 2002
Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnect
APPLIED MATERIALS INC34 citations93
US6176978B1Jan 23, 2001
Pasting layer formation method for high density plasma deposition chambers
APPLIED MATERIALS INC31 citations93
US6149784ANov 21, 2000
Sputtering chamber shield promoting reliable plasma ignition
APPLIED MATERIALS INC66 citations93
US5943600AAug 24, 1999
Treatment of a titanium nitride layer to improve resistance to elevated temperatures
APPLIED MATERIALS INC40 citations93
US5759360AJun 2, 1998
Wafer clean sputtering process
APPLIED MATERIALS INC51 citations93
US7053002B2May 30, 2006
Plasma preclean with argon, helium, and hydrogen gases
APPLIED MATERIALS INC19 citations92
US7014887B1Mar 21, 2006
Sequential sputter and reactive precleans of vias and contacts
APPLIED MATERIALS INC26 citations92
US6672864B2Jan 6, 2004
Method and apparatus for processing substrates in a system having high and low pressure areas
APPLIED MATERIALS INC36 citations92
US6589890B2Jul 8, 2003
Precleaning process for metal plug that minimizes damage to low-κ dielectric
APPLIED MATERIALS INC32 citations92
US6372301B1Apr 16, 2002
Method of improving adhesion of diffusion layers on fluorinated silicon dioxide
APPLIED MATERIALS INC25 citations92
US6267423B1Jul 31, 2001
End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector
APPLIED MATERIALS INC40 citations92
US6238533B1May 29, 2001
Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
APPLIED MATERIALS INC33 citations92
US5972178AOct 26, 1999
Continuous process for forming improved titanium nitride barrier layers
APPLIED MATERIALS INC52 citations92
US5697427ADec 16, 1997
Apparatus and method for cooling a substrate
APPLIED MATERIALS INC29 citations92
US7041200B2May 9, 2006
Reducing particle generation during sputter deposition
APPLIED MATERIALS INC45 citations91
US6077353AJun 20, 2000
Pedestal insulator for a pre-clean chamber
APPLIED MATERIALS INC35 citations90
US5882399AMar 16, 1999
Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
APPLIED MATERIALS INC52 citations90
US6426282B1Jul 30, 2002
Method of forming solder bumps on a semiconductor wafer
APPLIED MATERIALS INC28 citations89
US7323230B2Jan 29, 2008
Coating for aluminum component
APPLIED MATERIALS INC9 citations84
US7006888B2Feb 28, 2006
Semiconductor wafer preheating
APPLIED MATERIALS INC8 citations74
US6207027B1Mar 27, 2001
Method to reduce overhead time in an ion metal plasma process
APPLIED MATERIALS INC10 citations74
US6149777ANov 21, 2000
Method of producing smooth titanium nitride films having low resistivity
APPLIED MATERIALS INC6 citations74
US6071811AJun 6, 2000
Deposition of titanium nitride films having improved uniformity
APPLIED MATERIALS INC13 citations74
US6059872AMay 9, 2000
Smooth titanium nitride films having low resistivity
APPLIED MATERIALS INC11 citations74
US5919342AJul 6, 1999
Method for depositing golden titanium nitride
APPLIED MATERIALS INC9 citations74
US6899799B2May 31, 2005
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
APPLIED MATERIALS INC6 citations68