P

Inventor

KRISHNAN SRINATH

US51 patents
⚠️ This page may combine multiple inventors who share the name “KRISHNAN SRINATH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

49 patents
US6087208AJul 11, 2000

Method for increasing gate capacitance by using both high and low dielectric gate material

ADVANCED MICRO DEVICES INC137 citations99
US6060364AMay 9, 2000

Fast Mosfet with low-doped source/drain

ADVANCED MICRO DEVICES INC143 citations99
US6611023B1Aug 26, 2003

Field effect transistor with self alligned double gate and method of forming same

ADVANCED MICRO DEVICES INC83 citations98
US6548361B1Apr 15, 2003

SOI MOSFET and method of fabrication

ADVANCED MICRO DEVICES INC84 citations98
US6509613B1Jan 21, 2003

Self-aligned floating body control for SOI device through leakage enhanced buried oxide

ADVANCED MICRO DEVICES INC88 citations98
US6184112B1Feb 6, 2001

Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile

ADVANCED MICRO DEVICES INC136 citations98
US6955969B2Oct 18, 2005

Method of growing as a channel region to reduce source/drain junction capacitance

ADVANCED MICRO DEVICES INC89 citations97
US6204138B1Mar 20, 2001

Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effects

ADVANCED MICRO DEVICES INC71 citations96
US6100558AAug 8, 2000

Semiconductor device having enhanced gate capacitance by using both high and low dielectric materials

ADVANCED MICRO DEVICES INC43 citations96
US6512244B1Jan 28, 2003

SOI device with structure for enhancing carrier recombination and method of fabricating same

ADVANCED MICRO DEVICES INC60 citations95
US5960322ASep 28, 1999

Suppression of boron segregation for shallow source and drain junctions in semiconductors

ADVANCED MICRO DEVICES INC64 citations94
US6713819B1Mar 30, 2004

SOI MOSFET having amorphized source drain and method of fabrication

ADVANCED MICRO DEVICES INC45 citations93
US6518631B1Feb 11, 2003

Multi-Thickness silicide device formed by succesive spacers

ADVANCED MICRO DEVICES INC25 citations93
US6495887B1Dec 17, 2002

Argon implantation after silicidation for improved floating-body effects

ADVANCED MICRO DEVICES INC26 citations93
US6466082B1Oct 15, 2002

Circuit technique to deal with floating body effects

ADVANCED MICRO DEVICES INC49 citations93
US6465847B1Oct 15, 2002

Semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions

ADVANCED MICRO DEVICES INC20 citations93
US6441433B1Aug 27, 2002

Method of making a multi-thickness silicide SOI device

ADVANCED MICRO DEVICES INC24 citations93
US6429054B1Aug 6, 2002

Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions

ADVANCED MICRO DEVICES INC25 citations93
US6362063B1Mar 26, 2002

Formation of low thermal budget shallow abrupt junctions for semiconductor devices

ADVANCED MICRO DEVICES INC41 citations93
US6238960B1May 29, 2001

Fast MOSFET with low-doped source/drain

ADVANCED MICRO DEVICES INC29 citations93
US7132683B1Nov 7, 2006

Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologies

ADVANCED MICRO DEVICES INC26 citations92
US7071044B1Jul 4, 2006

Method of making a test structure for gate-body current and direct extraction of physical gate length using conventional CMOS

ADVANCED MICRO DEVICES INC30 citations92
US6589823B1Jul 8, 2003

Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug

ADVANCED MICRO DEVICES INC29 citations92
US6492209B1Dec 10, 2002

Selectively thin silicon film for creating fully and partially depleted SOI on same wafer

ADVANCED MICRO DEVICES INC28 citations92
US6462381B1Oct 8, 2002

Silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device with backside contact opening

ADVANCED MICRO DEVICES INC19 citations92
US6429083B1Aug 6, 2002

Removable spacer technology using ion implantation to augment etch rate differences of spacer materials

ADVANCED MICRO DEVICES INC32 citations92
US6420767B1Jul 16, 2002

Capacitively coupled DTMOS on SOI

ADVANCED MICRO DEVICES INC30 citations92
US6399452B1Jun 4, 2002

Method of fabricating transistors with low thermal budget

ADVANCED MICRO DEVICES INC28 citations92
US6498371B1Dec 24, 2002

Body-tied-to-body SOI CMOS inverter circuit

ADVANCED MICRO DEVICES INC32 citations90
US7626242B2Dec 1, 2009

Shallow trench isolation process utilizing differential liners

ADVANCED MICRO DEVICES INC8 citations84
US6566213B2May 20, 2003

Method of fabricating multi-thickness silicide device formed by disposable spacers

ADVANCED MICRO DEVICES INC15 citations84
US6541821B1Apr 1, 2003

SOI device with source/drain extensions and adjacent shallow pockets

ADVANCED MICRO DEVICES INC14 citations84
US6342423B1Jan 29, 2002

MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch

ADVANCED MICRO DEVICES INC16 citations84
US7122863B1Oct 17, 2006

SOI device with structure for enhancing carrier recombination and method of fabricating same

ADVANCED MICRO DEVICES INC17 citations83
US6630376B1Oct 7, 2003

Body-tied-to-body SOI CMOS inverter circuit

ADVANCED MICRO DEVICES INC13 citations82
US7045433B1May 16, 2006

Tip architecture with SPE for buffer and deep source/drain regions

ADVANCED MICRO DEVICES INC10 citations74
US6727149B1Apr 27, 2004

Method of making a hybrid SOI device that suppresses floating body effects

ADVANCED MICRO DEVICES INC7 citations74
US6613643B1Sep 2, 2003

Structure, and a method of realizing, for efficient heat removal on SOI

ADVANCED MICRO DEVICES INC7 citations74
US6407428B1Jun 18, 2002

Field effect transistor with a buried and confined metal plate to control short channel effects

ADVANCED MICRO DEVICES INC12 citations74
US6359298B1Mar 19, 2002

Capacitively coupled DTMOS on SOI for multiple devices

ADVANCED MICRO DEVICES INC9 citations74
US6326247B1Dec 4, 2001

Method of creating selectively thin silicon/oxide for making fully and partially depleted SOI on same waffer

ADVANCED MICRO DEVICES INC11 citations74
US6535015B1Mar 18, 2003

Device and method for testing performance of silicon structures

ADVANCED MICRO DEVICES INC11 citations73
US6830987B1Dec 14, 2004

Semiconductor device with a silicon-on-void structure and method of making the same

ADVANCED MICRO DEVICES INC11 citations70
US7364962B1Apr 29, 2008

Shallow trench isolation process utilizing differential liners

ADVANCED MICRO DEVICES INC2 citations63
US6717212B2Apr 6, 2004

Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure

ADVANCED MICRO DEVICES INC5 citations63
US6274915B1Aug 14, 2001

Method of improving MOS device performance by controlling degree of depletion in the gate electrode

ADVANCED MICRO DEVICES INC6 citations62
US7253068B1Aug 7, 2007

Dual SOI film thickness for body resistance control

ADVANCED MICRO DEVICES INC5 citations61
US6284608B1Sep 4, 2001

Method for making accumulation mode N-channel SOI

ADVANCED MICRO DEVICES INC2 citations56
US7768095B2Aug 3, 2010

Shallow trench isolation process utilizing differential liners

ADVANCED MICRO DEVICES INC0 citations52

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