Inventor
WEI AN CHYI
TW35 patents
⚠️ This page may combine multiple inventors who share the name “WEI AN CHYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS10276449B1Apr 30, 2019
Method for forming fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US10861960B1Dec 8, 2020
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations81
US11508582B2Nov 22, 2022
Cut metal gate processes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10714347B2Jul 14, 2020
Cut metal gate processes
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12015071B2Jun 18, 2024
Air spacers around contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11996466B2May 28, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11996468B2May 28, 2024
Multi-gate device fabrication and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11355616B2Jun 7, 2022
Air spacers around contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11329140B2May 10, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11282967B2Mar 22, 2022
Nanostructure field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11923359B2Mar 5, 2024
Method for forming fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11063043B2Jul 13, 2021
Method for forming fin field effect transistor (FinFet) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10515952B2Dec 24, 2019
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US11437498B2Sep 6, 2022
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12563803B2Feb 24, 2026
Cut metal gate processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408412B2Sep 2, 2025
Air spacers around contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107149B2Oct 1, 2024
Air spacer and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990341B2May 21, 2024
Cut metal gate processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11652155B2May 16, 2023
Air spacer and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349014B2May 31, 2022
Air spacer and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11961919B2Apr 16, 2024
Nanostructure field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10879074B2Dec 29, 2020
Method of forming semiconductor device and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12068398B2Aug 20, 2024
Fin field-effect transistor with void and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11735651B2Aug 22, 2023
FinFET device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11664444B2May 30, 2023
Fin field-effect transistor with void and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10672613B2Jun 2, 2020
Method of forming semiconductor structure and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12243872B2Mar 4, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
MACRONIX INT CO LTD
7 patentsUS7575990B2Aug 18, 2009
Method of forming self-aligned contacts and local interconnects
MACRONIX INT CO LTD10 citations84
US9449821B2Sep 20, 2016
Composite hard mask etching profile for preventing pattern collapse in high-aspect-ratio trenches
MACRONIX INT CO LTD8 citations82
US7723229B2May 25, 2010
Process of forming a self-aligned contact in a semiconductor device
MACRONIX INT CO LTD2 citations61
US9349746B1May 24, 2016
Method of fabricating deep trench semiconductor devices, and deep trench semiconductor devices
MACRONIX INT CO LTD2 citations60
US9190467B2Nov 17, 2015
Semiconductor structure and manufacturing method of the same
MACRONIX INT CO LTD0 citations52
US7410593B2Aug 12, 2008
Plasma etching methods using nitrogen memory species for sustaining glow discharge
MACRONIX INT CO LTD0 citations52
US9252153B1Feb 2, 2016
Method of word-line formation by semi-damascene process with thin protective conductor layer
MACRONIX INT CO LTD0 citations48