P

Inventor

WEI AN CHYI

TW35 patents
⚠️ This page may combine multiple inventors who share the name “WEI AN CHYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

27 patents
US10276449B1Apr 30, 2019

Method for forming fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US10861960B1Dec 8, 2020

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations81
US11508582B2Nov 22, 2022

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10714347B2Jul 14, 2020

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12015071B2Jun 18, 2024

Air spacers around contact plugs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11996466B2May 28, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11996468B2May 28, 2024

Multi-gate device fabrication and structures thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11355616B2Jun 7, 2022

Air spacers around contact plugs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11329140B2May 10, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11282967B2Mar 22, 2022

Nanostructure field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11923359B2Mar 5, 2024

Method for forming fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11063043B2Jul 13, 2021

Method for forming fin field effect transistor (FinFet) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10515952B2Dec 24, 2019

Fin field effect transistor (FinFET) device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US11437498B2Sep 6, 2022

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12563803B2Feb 24, 2026

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408412B2Sep 2, 2025

Air spacers around contact plugs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107149B2Oct 1, 2024

Air spacer and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990341B2May 21, 2024

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11652155B2May 16, 2023

Air spacer and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349014B2May 31, 2022

Air spacer and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11961919B2Apr 16, 2024

Nanostructure field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10879074B2Dec 29, 2020

Method of forming semiconductor device and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12068398B2Aug 20, 2024

Fin field-effect transistor with void and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11735651B2Aug 22, 2023

FinFET device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11664444B2May 30, 2023

Fin field-effect transistor with void and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10672613B2Jun 2, 2020

Method of forming semiconductor structure and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12243872B2Mar 4, 2025

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48

MACRONIX INT CO LTD

7 patents

WEI AN CHYI

1 patent