P

Inventor

KINOSHITA YASUSHI

JP55 patents
⚠️ This page may combine multiple inventors who share the name “KINOSHITA YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

17 patents
US5759883AJun 2, 1998

Method for making semiconductor device capable of independently forming MOS transistors and bipolar transistor

NEC CORP22 citations93
US5677866AOct 14, 1997

Semiconductor memory device

NEC CORP31 citations93
US5453640ASep 26, 1995

Semiconductor integrated circuit having MOS memory and bipolar peripherals

NEC CORP32 citations93
US6365828B1Apr 2, 2002

Electromagnetic interference suppressing device and circuit

NEC CORP46 citations92
US6300669B1Oct 9, 2001

Semiconductor integrated circuit device and method of designing same

NEC CORP18 citations84
US7129728B2Oct 31, 2006

LSI test socket for BGA

NEC CORP6 citations74
US6924562B2Aug 2, 2005

Semiconductor integrated circuit having at least one of a power supply plane and ground plane divided into parts insulated from one another

NEC CORP11 citations74
US6211029B1Apr 3, 2001

Process of fabricating a bipolar transistor having lightly doped epitaxial collector region constant in dopant impurity

NEC CORP9 citations74
US6127733AOct 3, 2000

Check pattern for via-hole opening examination

NEC CORP8 citations74
US6025219AFeb 15, 2000

Method of manufacturing a semiconductor device having MOS transistor and bipolar transistor in mixture on the same substrate

NEC CORP14 citations74
US5843828ADec 1, 1998

Method for fabricating a semiconductor device with bipolar transistor

NEC CORP7 citations74
US7477062B2Jan 13, 2009

LSI test socket for BGA

NEC CORP5 citations63
US7355265B2Apr 8, 2008

Semiconductor integrated circuit

NEC CORP6 citations63
US6531746B2Mar 11, 2003

Semiconductor device with high-speed switching circuit implemented by MIS transistors and process for fabrication thereof

NEC CORP4 citations63
US6414372B2Jul 2, 2002

Bipolar transistor having lightly doped epitaxial collector region constant in dopant impurity and process of fabrication thereof

NEC CORP2 citations63
US6150227ANov 21, 2000

Integrated circuit structure with a gap between resistor film and substrate

NEC CORP5 citations63
US5920107AJul 6, 1999

Semiconductor integrated circuit device with high integration density

NEC CORP2 citations63

KINOSHITA YASUSHI

6 patents

TERUMO CORP

5 patents

HITACHI LTD

5 patents

MITSUBISHI ELECTRIC CORP

4 patents

HITACHI MEDIA ELECTRON KK

4 patents

MIYAMOTO SATOSHI

1 patent

HITACHI LG DATA STORAGE INC

1 patent

KUNIYASU JUNKO

1 patent

HITACHI PRINTING SOLUTIONS LTD

1 patent

KOBAYASHI JUNICHI

1 patent

HITACHI LIGHTING LTD

1 patent

HITACHI OMRON TERMINAL SOLUTIONS CORP

1 patent

NAKAGAWA YUJI

1 patent

NOGAWA ATSUHIKO

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.