P

Inventor

YUKI KOICHIRO

JP33 patents
⚠️ This page may combine multiple inventors who share the name “YUKI KOICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

32 patents
US6091077AJul 18, 2000

MIS SOI semiconductor device with RTD and/or HET

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD87 citations98
US6015978AJan 18, 2000

Resonance tunnel device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD92 citations98
US5739544AApr 14, 1998

Quantization functional device utilizing a resonance tunneling effect and method for producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD139 citations98
US6674150B2Jan 6, 2004

Heterojunction bipolar transistor and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD58 citations96
US6597016B1Jul 22, 2003

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD53 citations96
US6492711B1Dec 10, 2002

Heterojunction bipolar transistor and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD59 citations96
US6399993B1Jun 4, 2002

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD67 citations96
US6342716B1Jan 29, 2002

Semiconductor device having dot elements as floating gate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD47 citations96
US6303516B1Oct 16, 2001

Method for forming dot element

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD55 citations96
US5543351AAug 6, 1996

Method of producing electrically insulated silicon structure

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD86 citations96
US6455364B1Sep 24, 2002

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD55 citations95
US6759697B2Jul 6, 2004

Heterojunction bipolar transistor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations93
US6171905B1Jan 9, 2001

Semiconductor device and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations93
US5972744AOct 26, 1999

Quantum effect device, method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US5486706AJan 23, 1996

Quantization functional device utilizing a resonance tunneling effect and method for producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US7091099B2Aug 15, 2006

Bipolar transistor and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations83
US5405454AApr 11, 1995

Electrically insulated silicon structure and producing method therefor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations82
US6756278B2Jun 29, 2004

Lateral heterojunction bipolar transistor and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6563146B1May 13, 2003

Lateral heterojunction bipolar transistor and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations74
US5562802AOct 8, 1996

Method of producing a quantum device which utilizes the quantum effect

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US5480492AJan 2, 1996

Method for removing organic or inorganic contaminant from silicon substrate surface

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74
US5444267AAug 22, 1995

Quantum device utilizing the quantum effect

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US5514614AMay 7, 1996

Method for producing quantization functional device utilizing a resonance tunneling effect

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations71
US7135721B2Nov 14, 2006

Heterojunction bipolar transistor having reduced driving voltage requirements

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6847063B2Jan 25, 2005

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6821870B2Nov 23, 2004

Heterojunction bipolar transistor and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US5888852AMar 30, 1999

Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6847062B2Jan 25, 2005

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62
US6713790B2Mar 30, 2004

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US7049198B2May 23, 2006

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
US6103583AAug 15, 2000

Method for producing quantization functional device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
US5945687AAug 31, 1999

Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52

PANASONIC CORP

1 patent