Inventor
OKASHITA KATSUMI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “OKASHITA KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PANASONIC CORP
16 patentsUS7759254B2Jul 20, 2010
Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
PANASONIC CORP21 citations92
US7601619B2Oct 13, 2009
Method and apparatus for plasma processing
PANASONIC CORP32 citations92
US7456085B2Nov 25, 2008
Method for introducing impurities
PANASONIC CORP14 citations84
US8004045B2Aug 23, 2011
Semiconductor device and method for producing the same
PANASONIC CORP11 citations83
US7800165B2Sep 21, 2010
Semiconductor device and method for producing the same
PANASONIC CORP7 citations74
US7754503B2Jul 13, 2010
Method for producing semiconductor device and semiconductor producing apparatus
PANASONIC CORP7 citations74
US8030187B2Oct 4, 2011
Method for manufacturing semiconductor device
PANASONIC CORP2 citations63
US7972945B2Jul 5, 2011
Plasma doping apparatus and method, and method for manufacturing semiconductor device
PANASONIC CORP4 citations63
US7939388B2May 10, 2011
Plasma doping method and plasma doping apparatus
PANASONIC CORP2 citations63
US7858155B2Dec 28, 2010
Plasma processing method and plasma processing apparatus
PANASONIC CORP4 citations63
US7790586B2Sep 7, 2010
Plasma doping method
PANASONIC CORP6 citations63
US7582492B2Sep 1, 2009
Method of doping impurities, and electronic element using the same
PANASONIC CORP4 citations63
US7858479B2Dec 28, 2010
Method and apparatus of fabricating semiconductor device
PANASONIC CORP2 citations62
US8012862B2Sep 6, 2011
Method for manufacturing semiconductor device using plasma doping
PANASONIC CORP0 citations52
US7871853B2Jan 18, 2011
Plasma doping method and apparatus employed in the same
PANASONIC CORP1 citations52
US7820230B2Oct 26, 2010
Plasma doping processing device and method thereof
PANASONIC CORP0 citations42
SASAKI YUICHIRO
7 patentsUS8409939B2Apr 2, 2013
Semiconductor device and method for fabricating the same
SASAKI YUICHIRO7 citations84
US8536000B2Sep 17, 2013
Method for producing a semiconductor device have fin-shaped semiconductor regions
SASAKI YUICHIRO8 citations83
US8063437B2Nov 22, 2011
Semiconductor device and method for producing the same
SASAKI YUICHIRO8 citations83
US8258585B2Sep 4, 2012
Semiconductor device
SASAKI YUICHIRO4 citations62
US8193080B2Jun 5, 2012
Method for fabricating semiconductor device and plasma doping system
SASAKI YUICHIRO4 citations62
US8124507B2Feb 28, 2012
Semiconductor device and method for fabricating the same
SASAKI YUICHIRO5 citations62
US8105926B2Jan 31, 2012
Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region
SASAKI YUICHIRO1 citations52
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
3 patentsUS7407874B2Aug 5, 2008
Plasma doping method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations93
US7358511B2Apr 15, 2008
Plasma doping method and plasma doping apparatus
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US7348264B2Mar 25, 2008
Plasma doping method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations93