Inventor

LAVRIC DAN S

US12 patents

Patents

12 patents

US11018222B1May 25, 2021

Metallization in integrated circuit structures

INTEL CORP16 citations82

US6846752B2Jan 25, 2005

Methods and devices for the suppression of copper hillock formation

INTEL CORP17 citations82

US12046654B2Jul 23, 2024

Integrated circuit structures including a titanium silicide material

INTEL CORP2 citations70

US12295170B2May 6, 2025

Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer

INTEL CORP1 citations62

US12402387B2Aug 26, 2025

Integrated circuit structures including a titanium silicide material

INTEL CORP0 citations60

US6818548B2Nov 16, 2004

Fast ramp anneal for hillock suppression in copper-containing structures

INTEL CORP3 citations60

US12051698B2Jul 30, 2024

Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

INTEL CORP0 citations59

US12113068B2Oct 8, 2024

Fabrication of gate-all-around integrated circuit structures having additive metal gates

INTEL CORP0 citations50

US12310060B2May 20, 2025

Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerances

INTEL CORP0 citations48

US12563782B2Feb 24, 2026

Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers

INTEL CORP0 citations45

US11984506B2May 14, 2024

Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer

INTEL CORP0 citations44

US11476164B2Oct 18, 2022

Integrated circuit structures having differentiated workfunction layers

INTEL CORP0 citations42