P

Inventor

MIZUNO BUNJI

JP70 patents
⚠️ This page may combine multiple inventors who share the name “MIZUNO BUNJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PANASONIC CORP

22 patents
US7759254B2Jul 20, 2010

Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device

PANASONIC CORP21 citations92
US7601619B2Oct 13, 2009

Method and apparatus for plasma processing

PANASONIC CORP32 citations92
US7700382B2Apr 20, 2010

Impurity introducing method using optical characteristics to determine annealing conditions

PANASONIC CORP10 citations84
US7456085B2Nov 25, 2008

Method for introducing impurities

PANASONIC CORP14 citations84
US8004045B2Aug 23, 2011

Semiconductor device and method for producing the same

PANASONIC CORP11 citations83
US7800165B2Sep 21, 2010

Semiconductor device and method for producing the same

PANASONIC CORP7 citations74
US7754503B2Jul 13, 2010

Method for producing semiconductor device and semiconductor producing apparatus

PANASONIC CORP7 citations74
US7741199B2Jun 22, 2010

Method for introducing impurities and apparatus for introducing impurities

PANASONIC CORP6 citations74
US7709362B2May 4, 2010

Method for introducing impurities and apparatus for introducing impurities

PANASONIC CORP6 citations74
US7696072B2Apr 13, 2010

Method for introduction impurities and apparatus for introducing impurities

PANASONIC CORP6 citations74
US7618883B2Nov 17, 2009

Method for introducing impurities and apparatus for introducing impurities

PANASONIC CORP6 citations74
US8030187B2Oct 4, 2011

Method for manufacturing semiconductor device

PANASONIC CORP2 citations63
US7981779B2Jul 19, 2011

Method for making junction and processed material formed using the same

PANASONIC CORP2 citations63
US7972945B2Jul 5, 2011

Plasma doping apparatus and method, and method for manufacturing semiconductor device

PANASONIC CORP4 citations63
US7939388B2May 10, 2011

Plasma doping method and plasma doping apparatus

PANASONIC CORP2 citations63
US7863168B2Jan 4, 2011

Plasma doping method and plasma doping apparatus

PANASONIC CORP2 citations63
US7858155B2Dec 28, 2010

Plasma processing method and plasma processing apparatus

PANASONIC CORP4 citations63
US7790586B2Sep 7, 2010

Plasma doping method

PANASONIC CORP6 citations63
US7582492B2Sep 1, 2009

Method of doping impurities, and electronic element using the same

PANASONIC CORP4 citations63
US7557364B2Jul 7, 2009

Charge neutralizing device

PANASONIC CORP4 citations63
US7858479B2Dec 28, 2010

Method and apparatus of fabricating semiconductor device

PANASONIC CORP2 citations62
US7619223B2Nov 17, 2009

Beam current measuring instrument and beam current measuring method using same

PANASONIC CORP2 citations60

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

18 patents
US4912065AMar 27, 1990

Plasma doping method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD171 citations98
US4937205AJun 26, 1990

Plasma doping process and apparatus therefor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD160 citations96
US4837172AJun 6, 1989

Method for removing impurities existing in semiconductor substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD120 citations96
US7407874B2Aug 5, 2008

Plasma doping method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations93
US7358511B2Apr 15, 2008

Plasma doping method and plasma doping apparatus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US7348264B2Mar 25, 2008

Plasma doping method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations93
US4997786AMar 5, 1991

Method of fabricating a semiconductor device having buried insulation layer separated by ditches

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD33 citations93
US7192854B2Mar 20, 2007

Method of plasma doping

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US6217951B1Apr 17, 2001

Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US5851906ADec 22, 1998

Impurity doping method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US5436176AJul 25, 1995

Method for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD38 citations92
US7365346B2Apr 29, 2008

Ion-implanting apparatus, ion-implanting method, and device manufactured thereby

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations84
US7199064B2Apr 3, 2007

Plasma processing method and apparatus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations74
US6037599AMar 14, 2000

Ion implantation apparatus and fabrication method for semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5898207AApr 27, 1999

Method for making a semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations73
US6169004B1Jan 2, 2001

Production method for a semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations71
US6784080B2Aug 31, 2004

Method of manufacturing semiconductor device by sputter doping

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62
US5817559AOct 6, 1998

Production method for a semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations60

SASAKI YUICHIRO

7 patents

PANASONIC IP MAN CO LTD

1 patent

SUMITOMO HEAVY INDUSTRIES

1 patent

RIKEN

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.