Inventor

WANG RONGJUN

US88 patents

⚠️ This page may combine multiple inventors who share the name “WANG RONGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG RONGJUN

APPLIED MATERIALS INC

Atomic layer deposition of tantalum based barrier materials

Atomic layer deposition of barrier materials

Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Selective ruthenium deposition on copper materials

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

Magnetic tunnel junctions and methods of fabrication thereof

Magnetic tunnel junctions suitable for high temperature thermal processing

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

Deposition ring and electrostatic chuck for physical vapor deposition chamber

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

Magnetic tunnel junctions suitable for high temperature thermal processing

Methods for forming structures with desired crystallinity for MRAM applications

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

Magnetic tunnel junctions suitable for high temperature thermal processing

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

Aluminum-nitride buffer and active layers by physical vapor deposition

Methods for depositing dielectric films via physical vapor deposition processes

Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Methods for forming structures with desired crystallinity for MRAM applications

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

Oxygen controlled PVD ALN buffer for GAN-based optoelectronic and electronic devices

Magnetic tunnel junction structures and methods of manufacture thereof

Methods for treating magnesium oxide film

Methods for forming structures with desired crystallinity for MRAM applications

Plasma chamber target for reducing defects in workpiece during dielectric sputtering

Process kit for multi-cathode processing chamber

Methods and apparatus for multi-cathode substrate processing

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

Magnetic tunnel junctions with coupling-pinning layer lattice matching

Magnetic tunnel junction structures and methods of manufacture thereof

Methods and apparatus for processing a substrate

Oxidized barrier layer

Low resistivity gapfill for logic devices

Shutter disk for physical vapor deposition (PVD) chamber

Silicon-containing layer for bit line resistance reduction

Silicon-containing layer for bit line resistance reduction

PVD buffer layers for LED fabrication

Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices

RASHEED MUHAMMAD M

PVD sputtering target with a protected backing plate

Uniformity tuning capable ESC grounding kit for RF PVD chamber

RASHEED MUHAMMAD

Deposition ring and electrostatic chuck for physical vapor deposition chamber

WANG RONGJUN

Substrate device having a tuned work function and methods of forming thereof

ZHU MINGWEI

PVD buffer layers for LED fabrication

FORSTER JOHN C

Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

HAWRYLCHAK LARA

Encapsulated sputtering target

UNIV TAIYUAN SCIENCE & TECH

Device and method for detecting flatness of sheet material