P

Inventor

KIM YUN-GI

KR55 patents
⚠️ This page may combine multiple inventors who share the name “KIM YUN-GI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

34 patents
US6258691B1Jul 10, 2001

Cylindrical capacitor and method for fabricating same

SAMSUNG ELECTRONICS CO LTD70 citations96
US5360753ANov 1, 1994

Manufacturing method for a semiconductor isolation region

SAMSUNG ELECTRONICS CO LTD65 citations94
US6881659B2Apr 19, 2005

Methods of forming self-aligned contact structures in semiconductor integrated circuit devices

SAMSUNG ELECTRONICS CO LTD28 citations93
US6880916B2Apr 19, 2005

Ink-jet printhead and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD44 citations93
US6848772B2Feb 1, 2005

Ink-jet printhead and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD21 citations93
US6649508B1Nov 18, 2003

Methods of forming self-aligned contact structures in semiconductor integrated circuit devices

SAMSUNG ELECTRONICS CO LTD39 citations93
US6576947B1Jun 10, 2003

Cylindrical capacitor and method for fabricating same

SAMSUNG ELECTRONICS CO LTD16 citations93
US6255224B1Jul 3, 2001

Method of forming contact for semiconductor device

SAMSUNG ELECTRONICS CO LTD27 citations93
US6214702B1Apr 10, 2001

Methods of forming semiconductor substrates using wafer bonding techniques and intermediate substrates formed thereby

SAMSUNG ELECTRONICS CO LTD36 citations93
US5844832ADec 1, 1998

Cell array structure for a ferroelectric semiconductor memory and a method for sensing data from the same

SAMSUNG ELECTRONICS CO LTD38 citations93
US5677234AOct 14, 1997

Methods of forming isolated semiconductor device active regions

SAMSUNG ELECTRONICS CO LTD24 citations92
US5372950ADec 13, 1994

Method for forming isolation regions in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD29 citations90
US5444005AAug 22, 1995

Method for manufacturing a capacitor of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD32 citations89
US5438013AAug 1, 1995

Method of making a semiconductor memory device having a capacitor

SAMSUNG ELECTRONICS CO LTD23 citations86
US7964499B2Jun 21, 2011

Methods of forming semiconductor solar cells having front surface electrodes

SAMSUNG ELECTRONICS CO LTD10 citations84
US7622778B2Nov 24, 2009

Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void

SAMSUNG ELECTRONICS CO LTD13 citations84
US7411241B2Aug 12, 2008

Vertical type nanotube semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations84
US6458638B2Oct 1, 2002

Method for fabricating a semiconductor memory device having silicon-on-insulator (SOI) structure

SAMSUNG ELECTRONICS CO LTD14 citations84
US5796134AAug 18, 1998

Memory cells with a reduced area capacitor interconnect and methods of fabrication therefor

SAMSUNG ELECTRONICS CO LTD15 citations82
US7320513B2Jan 22, 2008

Bubble-ink jet print head and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD8 citations74
US6846068B2Jan 25, 2005

Monolithic ink-jet printhead and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations74
US6294806B1Sep 25, 2001

Semiconductor memory device having silicon-on-insulator (SOI) structure and method for fabricating thereof

SAMSUNG ELECTRONICS CO LTD10 citations74
US6200849B1Mar 13, 2001

Methods of fabricating conductive contacts for integrated circuit memory devices using first and second dielectric layers and first and second conductive layers

SAMSUNG ELECTRONICS CO LTD9 citations74
US6080616AJun 27, 2000

Methods of fabricating memory cells with reduced area capacitor interconnect

SAMSUNG ELECTRONICS CO LTD12 citations74
US5801410ASep 1, 1998

Ferroelectric capacitors including extended electrodes

SAMSUNG ELECTRONICS CO LTD11 citations74
US5252511AOct 12, 1993

Isolation method in a semiconductor device

SAMSUNG ELECTRONICS CO LTD11 citations71
US7939408B2May 10, 2011

Non-volatile memory device for 2-bit operation and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7875921B2Jan 25, 2011

Non-volatile memory device for 2-bit operation and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7675105B2Mar 9, 2010

Non-volatile memory device for 2-bit operation and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7018019B2Mar 28, 2006

Ink-jet printhead and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7481942B2Jan 27, 2009

Monolithic ink-jet printhead and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations60
US7465988B2Dec 16, 2008

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7297596B2Nov 20, 2007

Method of manufacturing a semiconductor device having a switching function

SAMSUNG ELECTRONICS CO LTD0 citations51
US5641705AJun 24, 1997

Device isolation method of semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations51

VEDANTA BIOSCIENCES INC

7 patents

LG ELECTRONICS INC

4 patents

UNIV CHICAGO

2 patents

SEO HYEOUNG-WON

1 patent

KIM YUN-GI

1 patent

KIM DONG-KYUN

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.