Inventor
GOSSNER HARALD
DE90 patents
⚠️ This page may combine multiple inventors who share the name “GOSSNER HARALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
24 patentsUS6905892B2Jun 14, 2005
Operating method for a semiconductor component
INFINEON TECHNOLOGIES AG102 citations97
US6441437B1Aug 27, 2002
Integrated semiconductor circuit with protective structure for protection against electrostatic discharge
INFINEON TECHNOLOGIES AG69 citations96
US8686510B2Apr 1, 2014
ESD protection element and ESD protection device for use in an electrical circuit
INFINEON TECHNOLOGIES AG23 citations93
US7919816B2Apr 5, 2011
Electrostatic discharge protection element
INFINEON TECHNOLOGIES AG30 citations93
US7838948B2Nov 23, 2010
Fin interconnects for multigate FET circuit blocks
INFINEON TECHNOLOGIES AG21 citations93
US7646046B2Jan 12, 2010
Field effect transistor with a fin structure
INFINEON TECHNOLOGIES AG25 citations93
US6320232B1Nov 20, 2001
Integrated semiconductor circuit with protective structure for protection against electrostatic discharge
INFINEON TECHNOLOGIES AG39 citations93
US7638370B2Dec 29, 2009
Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor
INFINEON TECHNOLOGIES AG26 citations92
US6194764B1Feb 27, 2001
Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge
INFINEON TECHNOLOGIES AG49 citations92
US7838940B2Nov 23, 2010
Drain-extended field effect transistor
INFINEON TECHNOLOGIES AG14 citations84
US7821062B2Oct 26, 2010
Field effect transistor and method for producing a field effect transistor
INFINEON TECHNOLOGIES AG12 citations84
US7470957B2Dec 30, 2008
Electrostatic discharge protection
INFINEON TECHNOLOGIES AG10 citations84
US7450358B2Nov 11, 2008
ESD protective circuit for an electronic circuit having two or more supply voltages
INFINEON TECHNOLOGIES AG10 citations84
US6590263B2Jul 8, 2003
ESD protection configuration for signal inputs and outputs in semiconductor devices with substrate isolation
INFINEON TECHNOLOGIES AG15 citations84
US8354710B2Jan 15, 2013
Field-effect device and manufacturing method thereof
INFINEON TECHNOLOGIES AG5 citations83
US7838939B2Nov 23, 2010
ESD protection element
INFINEON TECHNOLOGIES AG15 citations83
US6930501B2Aug 16, 2005
Method for determining an ESD/latch-up strength of an integrated circuit
INFINEON TECHNOLOGIES AG18 citations82
US7678632B2Mar 16, 2010
MuGFET with increased thermal mass
INFINEON TECHNOLOGIES AG7 citations74
US6751077B2Jun 15, 2004
ESD protection configuration for signal inputs and outputs with overvoltage tolerance
INFINEON TECHNOLOGIES AG9 citations74
US9647069B2May 9, 2017
Drain extended field effect transistors and methods of formation thereof
INFINEON TECHNOLOGIES AG2 citations73
US7087938B2Aug 8, 2006
ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuit
INFINEON TECHNOLOGIES AG10 citations73
US8878234B2Nov 4, 2014
Semiconductor devices
INFINEON TECHNOLOGIES AG5 citations71
US7729094B2Jun 1, 2010
ESD protection circuit and method
INFINEON TECHNOLOGIES AG2 citations63
US6713841B2Mar 30, 2004
ESD guard structure
INFINEON TECHNOLOGIES AG6 citations63
SHRIVASTAVA MAYANK
7 patentsUS8664720B2Mar 4, 2014
High voltage semiconductor devices
SHRIVASTAVA MAYANK26 citations92
US8963201B2Feb 24, 2015
Tunable fin-SCR for robust ESD protection
SHRIVASTAVA MAYANK10 citations84
US8785968B2Jul 22, 2014
Silicon controlled rectifier (SCR) device for bulk FinFET technology
SHRIVASTAVA MAYANK7 citations84
US8681461B2Mar 25, 2014
Selective current pumping to enhance low-voltage ESD clamping using high voltage devices
SHRIVASTAVA MAYANK7 citations84
US8629420B1Jan 14, 2014
Drain extended MOS device for bulk FinFET technology
SHRIVASTAVA MAYANK7 citations84
US8536648B2Sep 17, 2013
Drain extended field effect transistors and methods of formation thereof
SHRIVASTAVA MAYANK12 citations84
US8455947B2Jun 4, 2013
Device and method for coupling first and second device portions
SHRIVASTAVA MAYANK10 citations83
GOSSNER HARALD
6 patentsUS8455949B2Jun 4, 2013
ESD protection element and ESD protection device for use in an electrical circuit
GOSSNER HARALD12 citations84
US8405121B2Mar 26, 2013
Semiconductor devices
GOSSNER HARALD12 citations81
US8476711B2Jul 2, 2013
System for protection against electrostatic discharges in an electrical circuit
GOSSNER HARALD5 citations73
US9577079B2Feb 21, 2017
Tunnel field effect transistors
GOSSNER HARALD5 citations71
US8450156B2May 28, 2013
Method for producing a thyristor
GOSSNER HARALD1 citations62
US8236624B2Aug 7, 2012
Method for producing a thyristor
GOSSNER HARALD2 citations62
INTEL CORP
5 patentsUS11380806B2Jul 5, 2022
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers
INTEL CORP2 citations73
US11373995B2Jun 28, 2022
Group III-nitride antenna diode
INTEL CORP2 citations73
US12034085B2Jul 9, 2024
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers
INTEL CORP0 citations62
US11545586B2Jan 3, 2023
Group III-nitride Schottky diode
INTEL CORP0 citations62
US11424354B2Aug 23, 2022
Group III-nitride silicon controlled rectifier
INTEL CORP0 citations62
INTEL IP CORP
3 patentsSIEMENS AG
1 patentSOLDNER WOLFGANG
1 patentINTEL DEUTSCHLAND GMBH
1 patentINDIAN INST SCIENT
1 patentFRAUNHOFER GES FORSCHUNG
1 patentShowing the top 50 of 90 patents by PatentIndex Score.