P

Inventor

GOSSNER HARALD

DE90 patents
⚠️ This page may combine multiple inventors who share the name “GOSSNER HARALD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

24 patents
US6905892B2Jun 14, 2005

Operating method for a semiconductor component

INFINEON TECHNOLOGIES AG102 citations97
US6441437B1Aug 27, 2002

Integrated semiconductor circuit with protective structure for protection against electrostatic discharge

INFINEON TECHNOLOGIES AG69 citations96
US8686510B2Apr 1, 2014

ESD protection element and ESD protection device for use in an electrical circuit

INFINEON TECHNOLOGIES AG23 citations93
US7919816B2Apr 5, 2011

Electrostatic discharge protection element

INFINEON TECHNOLOGIES AG30 citations93
US7838948B2Nov 23, 2010

Fin interconnects for multigate FET circuit blocks

INFINEON TECHNOLOGIES AG21 citations93
US7646046B2Jan 12, 2010

Field effect transistor with a fin structure

INFINEON TECHNOLOGIES AG25 citations93
US6320232B1Nov 20, 2001

Integrated semiconductor circuit with protective structure for protection against electrostatic discharge

INFINEON TECHNOLOGIES AG39 citations93
US7638370B2Dec 29, 2009

Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor

INFINEON TECHNOLOGIES AG26 citations92
US6194764B1Feb 27, 2001

Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge

INFINEON TECHNOLOGIES AG49 citations92
US7838940B2Nov 23, 2010

Drain-extended field effect transistor

INFINEON TECHNOLOGIES AG14 citations84
US7821062B2Oct 26, 2010

Field effect transistor and method for producing a field effect transistor

INFINEON TECHNOLOGIES AG12 citations84
US7470957B2Dec 30, 2008

Electrostatic discharge protection

INFINEON TECHNOLOGIES AG10 citations84
US7450358B2Nov 11, 2008

ESD protective circuit for an electronic circuit having two or more supply voltages

INFINEON TECHNOLOGIES AG10 citations84
US6590263B2Jul 8, 2003

ESD protection configuration for signal inputs and outputs in semiconductor devices with substrate isolation

INFINEON TECHNOLOGIES AG15 citations84
US8354710B2Jan 15, 2013

Field-effect device and manufacturing method thereof

INFINEON TECHNOLOGIES AG5 citations83
US7838939B2Nov 23, 2010

ESD protection element

INFINEON TECHNOLOGIES AG15 citations83
US6930501B2Aug 16, 2005

Method for determining an ESD/latch-up strength of an integrated circuit

INFINEON TECHNOLOGIES AG18 citations82
US7678632B2Mar 16, 2010

MuGFET with increased thermal mass

INFINEON TECHNOLOGIES AG7 citations74
US6751077B2Jun 15, 2004

ESD protection configuration for signal inputs and outputs with overvoltage tolerance

INFINEON TECHNOLOGIES AG9 citations74
US9647069B2May 9, 2017

Drain extended field effect transistors and methods of formation thereof

INFINEON TECHNOLOGIES AG2 citations73
US7087938B2Aug 8, 2006

ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuit

INFINEON TECHNOLOGIES AG10 citations73
US8878234B2Nov 4, 2014

Semiconductor devices

INFINEON TECHNOLOGIES AG5 citations71
US7729094B2Jun 1, 2010

ESD protection circuit and method

INFINEON TECHNOLOGIES AG2 citations63
US6713841B2Mar 30, 2004

ESD guard structure

INFINEON TECHNOLOGIES AG6 citations63

SHRIVASTAVA MAYANK

7 patents

GOSSNER HARALD

6 patents

INTEL CORP

5 patents

INTEL IP CORP

3 patents

SIEMENS AG

1 patent

SOLDNER WOLFGANG

1 patent

INTEL DEUTSCHLAND GMBH

1 patent

INDIAN INST SCIENT

1 patent

FRAUNHOFER GES FORSCHUNG

1 patent

Showing the top 50 of 90 patents by PatentIndex Score.