Inventor
RAO RAMGOPAL
IN33 patents
⚠️ This page may combine multiple inventors who share the name “RAO RAMGOPAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LENSGEN INC
15 patentsUS10159564B2Dec 25, 2018
Two-part accomodating intraocular lens device
LENSGEN INC34 citations98
US10111745B2Oct 30, 2018
Accommodating intraocular lens
LENSGEN INC23 citations94
US10004596B2Jun 26, 2018
Accommodating intraocular lens device
LENSGEN INC31 citations94
US9186244B2Nov 17, 2015
Accommodating intraocular lens
LENSGEN INC43 citations94
US10772721B2Sep 15, 2020
Accommodating intraocular lens
LENSGEN INC13 citations86
US11065107B2Jul 20, 2021
Accommodating intraocular lens device
LENSGEN INC5 citations84
US11000364B2May 11, 2021
Two-part accommodating intraocular lens device
LENSGEN INC6 citations84
US10842616B2Nov 24, 2020
Accommodating intraocular lens device
LENSGEN INC10 citations84
US10485654B2Nov 26, 2019
Accommodating intraocular lens device
LENSGEN INC7 citations84
US11471270B2Oct 18, 2022
Accommodating intraocular lens device
LENSGEN INC2 citations73
US11471273B2Oct 18, 2022
Two-part accommodating intraocular lens device
LENSGEN INC1 citations73
US11464624B2Oct 11, 2022
Two-part accommodating intraocular lens device
LENSGEN INC1 citations73
US11464621B2Oct 11, 2022
Accommodating intraocular lens device
LENSGEN INC1 citations73
US11464622B2Oct 11, 2022
Two-part accommodating intraocular lens device
LENSGEN INC1 citations73
US11826246B2Nov 28, 2023
Accommodating intraocular lens device
LENSGEN INC0 citations62
INFINEON TECHNOLOGIES AG
9 patentsUS8354710B2Jan 15, 2013
Field-effect device and manufacturing method thereof
INFINEON TECHNOLOGIES AG5 citations83
US9647069B2May 9, 2017
Drain extended field effect transistors and methods of formation thereof
INFINEON TECHNOLOGIES AG2 citations73
US8878234B2Nov 4, 2014
Semiconductor devices
INFINEON TECHNOLOGIES AG5 citations71
US9087892B2Jul 21, 2015
Drain extended field effect transistors and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations52
US10374068B2Aug 6, 2019
Tunnel field effect transistors
INFINEON TECHNOLOGIES AG0 citations51
US9455275B2Sep 27, 2016
High voltage semiconductor devices
INFINEON TECHNOLOGIES AG0 citations51
US9401352B2Jul 26, 2016
Field-effect device and manufacturing method thereof
INFINEON TECHNOLOGIES AG0 citations51
US9368573B2Jun 14, 2016
Methods for manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US9035375B2May 19, 2015
Field-effect device and manufacturing method thereof
INFINEON TECHNOLOGIES AG0 citations51
SHRIVASTAVA MAYANK
5 patentsUS8664720B2Mar 4, 2014
High voltage semiconductor devices
SHRIVASTAVA MAYANK26 citations92
US8536648B2Sep 17, 2013
Drain extended field effect transistors and methods of formation thereof
SHRIVASTAVA MAYANK12 citations84
US8455947B2Jun 4, 2013
Device and method for coupling first and second device portions
SHRIVASTAVA MAYANK10 citations83
US8643090B2Feb 4, 2014
Semiconductor devices and methods for manufacturing a semiconductor device
SHRIVASTAVA MAYANK2 citations61
US8097930B2Jan 17, 2012
Semiconductor devices with trench isolations
SHRIVASTAVA MAYANK2 citations61