Inventor

LIM HEUNG-SOO

KR18 patents

⚠️ This page may combine multiple inventors who share the name “LIM HEUNG-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM HEUNG-SOO

SAMSUNG ELECTRONICS CO LTD

Flash memory device with improved read speed

Flash memory device having a data buffer and programming method of the same

Semiconductor memory device and related programming method

Non-volatile memory device and method of programming same

Semiconductor memory system and method for multi-sector erase operation

Flash memory device having column predecoder capable of selecting all column selection transistors and stress test method thereof

Flash memory device capable of reducing test time and test method thereof

Memory system and method of reading data thereof

Semiconductor memory device using pipelined-buffer programming and related method

Flash memory device and related erase operation

Non-volatile memory device having controlled bulk voltage and method of programming same

Semiconductor memory device and related programming method

NOR flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith

NOR flash memory device with multi level cell and read method thereof

Nonvolatile memory devices capable of reducing data programming time and methods of driving the same

SAMSUNG ELECTRONIS CO LTD

NOR flash memory device and method of shortening a program time

SAMSUNG ELECTROINCS CO LTD

Non-volatile memory device and method of programming same

JEONG JAE-YONG

Programming non-volatile memory devices based on data logic values