Inventor
ERNST THOMAS
FR29 patents
⚠️ This page may combine multiple inventors who share the name “ERNST THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
10 patentsUS7518195B2Apr 14, 2009
Field-effect microelectronic device, capable of forming one or several transistor channels
COMMISSARIAT ENERGIE ATOMIQUE25 citations91
US7910917B2Mar 22, 2011
Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels
COMMISSARIAT ENERGIE ATOMIQUE10 citations83
US9601352B2Mar 21, 2017
Method of localized annealing of semi-conducting elements using a reflective area
COMMISSARIAT ENERGIE ATOMIQUE2 citations67
US8367487B2Feb 5, 2013
Structure and method for fabricating a microelectronic device provided with one or more quantum wires able to form one or more transistor channels
COMMISSARIAT ENERGIE ATOMIQUE3 citations61
US7902575B2Mar 8, 2011
Field-effect microelectronic device, capable of forming one or several transistor channels
COMMISSARIAT ENERGIE ATOMIQUE4 citations61
US8343780B2Jan 1, 2013
Method of stressing a thin pattern
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US7820523B2Oct 26, 2010
Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US11145549B2Oct 12, 2021
Field effect transistor with an atomically thin channel
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US10670507B2Jun 2, 2020
Electromechanical detection device, particularly for gravimetric detection, and method for manufacturing the device
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US7879690B2Feb 1, 2011
Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
ERNST THOMAS
8 patentsUS8492232B2Jul 23, 2013
Production of a transistor gate on a multibranch channel structure and means for isolating this gate from the source and drain regions
ERNST THOMAS16 citations80
US9053976B2Jun 9, 2015
Structure and production process of a microelectronic 3D memory device of flash NAND type
ERNST THOMAS12 citations79
US10216698B2Feb 26, 2019
Analysis device including a MEMS and/or NEMS network
ERNST THOMAS3 citations72
US8288823B2Oct 16, 2012
Double-gate transistor structure equipped with a multi-branch channel
ERNST THOMAS6 citations69
US8246775B2Aug 21, 2012
Method of implanting RFID tags in corrugated paperboard
ERNST THOMAS2 citations62
US8088674B2Jan 3, 2012
Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes
ERNST THOMAS4 citations58
US8173545B2May 8, 2012
Method for the fabrication of a transistor gate using at least one electron beam
ERNST THOMAS0 citations41
US8847395B2Sep 30, 2014
Microelectronic device having metal interconnection levels connected by programmable vias
ERNST THOMAS0 citations34