Inventor
POIROUX THIERRY
FR21 patents
⚠️ This page may combine multiple inventors who share the name “POIROUX THIERRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
9 patentsUS8349667B2Jan 8, 2013
Method for stabilizing germanium nanowires obtained by condensation
COMMISSARIAT ENERGIE ATOMIQUE25 citations90
US7829916B2Nov 9, 2010
Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor
COMMISSARIAT ENERGIE ATOMIQUE15 citations84
US7968945B2Jun 28, 2011
Microelectronic device provided with transistors coated with a piezoelectric layer
COMMISSARIAT ENERGIE ATOMIQUE7 citations79
US10914703B2Feb 9, 2021
Computer implemented method for determining intrinsic parameter in a stacked nanowires MOSFET
COMMISSARIAT ENERGIE ATOMIQUE2 citations66
US7361592B2Apr 22, 2008
Method for producing a component comprising at least one germanium-based element and component obtained by such a method
COMMISSARIAT ENERGIE ATOMIQUE3 citations63
US8021986B2Sep 20, 2011
Method for producing a transistor with metallic source and drain
COMMISSARIAT ENERGIE ATOMIQUE2 citations62
US7473588B2Jan 6, 2009
Method for insulating patterns formed in a thin film of oxidizable semi-conducting material
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US9235668B1Jan 12, 2016
Computer implemented method for calculating a charge density at a gate interface of a double gate transistor
COMMISSARIAT ENERGIE ATOMIQUE1 citations45
US8021934B2Sep 20, 2011
Method for making a transistor with metallic source and drain
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
VINET MAUD
4 patentsUS8399316B2Mar 19, 2013
Method for making asymmetric double-gate transistors
VINET MAUD6 citations82
US8105906B2Jan 31, 2012
Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
VINET MAUD1 citations61
US8324057B2Dec 4, 2012
Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
VINET MAUD0 citations51
US8232168B2Jul 31, 2012
Method for making asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
VINET MAUD0 citations51