Inventor

KAHLERT VOLKER

DE25 patents

⚠️ This page may combine multiple inventors who share the name “KAHLERT VOLKER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAHLERT VOLKER

ADVANCED MICRO DEVICES INC

Metallization process sequence for a barrier metal layer

Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity

Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics

Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction

Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity

Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer

Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device

Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius

Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition

Method of forming a conductive barrier layer having improved coverage within critical openings

Method of forming an insulating capping layer for a copper metallization layer

Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation

Method for cleaning the surface of a substrate

Interface void monitoring in a damascene process

Technique for forming nickel silicide by depositing nickel from a gaseous precursor

Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer

GLOBALFOUNDRIES INC

Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

Semiconductor structure and method of forming the same

STRECK CHRISTOF

Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques

Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer

KAHLERT VOLKER

Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices

Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices

HOHAGE JOERG

Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment