Inventor

WACASER BRENT A

US61 patents

⚠️ This page may combine multiple inventors who share the name “WACASER BRENT A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WACASER BRENT A

IBM

Reduction of defect induced leakage in III-V semiconductor devices

Sidewall spacer for integration of group III nitride with patterned silicon substrate

Automatic defect detection and classification for high throughput electron channeling contrast imaging

Multi-beam electron microscope for electron channeling contrast imaging of semiconductor material

Reduction of defect induced leakage in III-V semiconductor devices

Enhanced defect reduction for heteroepitaxy by seed shape engineering

Silicon-based Josephson junction for qubit devices

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

Enhanced defect reduction for heteroepitaxy by seed shape engineering

Automatic alignment for high throughput electron channeling contrast imaging

Junction interlayer dielectric for reducing leakage current in semiconductor devices

Post growth defect reduction for heteroepitaxial materials

Growing groups III-V lateral nanowire channels

Growing groups III-V lateral nanowire channels

Nanocavity monolayer laser monolithically integrated with LED pump

Nanocavity monolayer laser monolithically integrated with LED pump

Method and apparatus to apply material to a surface

Dual-material mandrel for epitaxial crystal growth on silicon

Epitaxial Josephson junction device

Epitaxial Josephson junction transmon device

Glassy carbon mask for immersion implant and selective laser anneal

Electron channeling pattern acquisition from small crystalline areas

Growing groups III-V lateral nanowire channels

Thermal receiver for high power solar concentrators and method of assembly

Thermal receiver for high power solar concentrators and method of assembly

III-V and Zn based finFET structure formed using low temperature deposition techniques

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

Enabling high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy

Dual-material mandrel for epitaxial crystal growth on silicon

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

Nanocavity monolayer laser monolithically integrated with LED pump

Method of forming a III-V and Zn based finFET structure using low temperature deposition techniques

Electron channeling pattern acquisition from small crystalline areas

III-V fin generation by lateral growth on silicon sidewall

Low resistance contact for semiconductor devices

Electron channeling pattern acquisition from small crystalline areas

III-V FIN generation by lateral growth on silicon sidewall

III-V fin generation by lateral growth on silicon sidewall

Highly responsive III-V photodetectors using ZnO:Al as n-type emitter

Junction interlayer dielectric for reducing leakage current in semiconductor devices

Reduction of defect induced leakage in III-V semiconductor devices

Post growth defect reduction for heteroepitaxial materials

Reduction of defect induced leakage in III-V semiconductor devices

Low resistance contact for semiconductor devices

Dual-material mandrel for epitaxial crystal growth on silicon

Highly responsive III-V photodetectors using ZnO:Al as N-type emitter

Method for applying material to a surface

Single-junction photovoltaic cell

MARTIN YVES C

Multi-element packaging of concentrator photovoltaic cells

COHEN GUY

Production scale fabrication method for high resolution AFM tips