Inventor
EDGE LISA F
US18 patents
⚠️ This page may combine multiple inventors who share the name “EDGE LISA F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
9 patentsUS9490255B1Nov 8, 2016
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
IBM25 citations94
US9502420B1Nov 22, 2016
Structure and method for highly strained germanium channel fins for high mobility pFINFETs
IBM10 citations84
US9406679B2Aug 2, 2016
Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate
IBM10 citations84
US10304746B2May 28, 2019
Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustments
IBM3 citations73
US10930566B2Feb 23, 2021
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
IBM0 citations62
US10573565B2Feb 25, 2020
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
IBM0 citations52
US10312259B2Jun 4, 2019
Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same
IBM0 citations52
US9490161B2Nov 8, 2016
Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same
IBM1 citations52
US10139358B2Nov 27, 2018
Method for characterization of a layered structure
IBM0 citations34
EDGE LISA F
3 patentsUS8232607B2Jul 31, 2012
Borderless contact for replacement gate employing selective deposition
EDGE LISA F42 citations93
US8796128B2Aug 5, 2014
Dual metal fill and dual threshold voltage for replacement gate metal devices
EDGE LISA F9 citations77
US9093558B2Jul 28, 2015
Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate
EDGE LISA F1 citations51