Inventor
CHOI CHANGHWAN
US17 patents
⚠️ This page may combine multiple inventors who share the name “CHOI CHANGHWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
7 patentsUS7989902B2Aug 2, 2011
Scavenging metal stack for a high-k gate dielectric
IBM28 citations92
US9105745B2Aug 11, 2015
Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFET
IBM13 citations84
US8367496B2Feb 5, 2013
Scavanging metal stack for a high-k gate dielectric
IBM13 citations84
US9263344B2Feb 16, 2016
Low threshold voltage CMOS device
IBM4 citations73
US8343839B2Jan 1, 2013
Scaled equivalent oxide thickness for field effect transistor devices
IBM4 citations63
US9455203B2Sep 27, 2016
Low threshold voltage CMOS device
IBM1 citations52
US8940599B2Jan 27, 2015
Scaled equivalent oxide thickness for field effect transistor devices
IBM0 citations52
ANDO TAKASHI
3 patentsUS8941184B2Jan 27, 2015
Low threshold voltage CMOS device
ANDO TAKASHI14 citations92
US8097500B2Jan 17, 2012
Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device
ANDO TAKASHI6 citations71
US8716813B2May 6, 2014
Scaled equivalent oxide thickness for field effect transistor devices
ANDO TAKASHI0 citations52
SAMSUNG ELECTRONICS CO LTD
3 patentsUS11153426B2Oct 19, 2021
Electronic device and control method thereof
SAMSUNG ELECTRONICS CO LTD0 citations56
US11869213B2Jan 9, 2024
Electronic device for analyzing skin image and method for controlling the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US10630827B2Apr 21, 2020
Electronic device and control method thereof
SAMSUNG ELECTRONICS CO LTD0 citations45