Inventor

CHEPULSKYY ROMAN

US20 patents

⚠️ This page may combine multiple inventors who share the name “CHEPULSKYY ROMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEPULSKYY ROMAN

SAMSUNG ELECTRONICS CO LTD

Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions

Method and system for providing magnetic junctions including Heusler multilayers

Multilayered vertical spin-orbit torque devices

Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications

Spin-torque oscillator based on easy-cone anisotropy

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers

Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications

Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer

Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque

B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM

Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories

Dipole-coupled spin-orbit torque structure

Race-track memory with improved domain wall motion control

Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s)

Method and system for providing a diluted free layer magnetic junction usable in spin transfer torque applications

Method and system for providing thermally assisted magnetic junctions having a multi-phase operation

Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applications

APALKOV DMYTRO

Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy

CHEPULSKYY ROMAN

Magnetic element having perpendicular anisotropy with enhanced efficiency