Inventor
KHVALKOVSKIY ALEXEY VASILYEVITCH
US19 patents
⚠️ This page may combine multiple inventors who share the name “KHVALKOVSKIY ALEXEY VASILYEVITCH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS9130155B2Sep 8, 2015
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
SAMSUNG ELECTRONICS CO LTD59 citations98
US9460397B2Oct 4, 2016
Quantum computing device spin transfer torque magnetic memory
SAMSUNG ELECTRONICS CO LTD28 citations94
US9105830B2Aug 11, 2015
Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
SAMSUNG ELECTRONICS CO LTD21 citations92
US9076954B2Jul 7, 2015
Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
SAMSUNG ELECTRONICS CO LTD15 citations84
US9478730B2Oct 25, 2016
Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
SAMSUNG ELECTRONICS CO LTD4 citations73
US9166152B2Oct 20, 2015
Diffusionless transformations in MTJ stacks
SAMSUNG ELECTRONICS CO LTD4 citations73
US9076541B2Jul 7, 2015
Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching
SAMSUNG ELECTRONICS CO LTD6 citations73
US10297300B2May 21, 2019
Method and system for determining temperature using a magnetic junction
SAMSUNG ELECTRONICS CO LTD0 citations52
US10276226B2Apr 30, 2019
Method and system for determining temperature using a magnetic junction
SAMSUNG ELECTRONICS CO LTD0 citations52
US9203017B2Dec 1, 2015
Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories
SAMSUNG ELECTRONICS CO LTD1 citations52
US9929339B2Mar 27, 2018
Method and system for providing magnetic junctions including self-initializing reference layers
SAMSUNG ELECTRONICS CO LTD0 citations42
US9741927B2Aug 22, 2017
Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
SAMSUNG ELECTRONICS CO LTD0 citations42
APALKOV DMYTRO
5 patentsUS8766383B2Jul 1, 2014
Method and system for providing a magnetic junction using half metallic ferromagnets
APALKOV DMYTRO10 citations84
US9490421B2Nov 8, 2016
Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions
APALKOV DMYTRO7 citations83
US8786039B2Jul 22, 2014
Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
APALKOV DMYTRO11 citations83
US8697484B2Apr 15, 2014
Method and system for setting a pinned layer in a magnetic tunneling junction
APALKOV DMYTRO2 citations62
US8649214B2Feb 11, 2014
Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof
APALKOV DMYTRO3 citations62
KHVALKOVSKIY ALEXEY VASILYEVITCH
2 patentsUS9076537B2Jul 7, 2015
Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction
KHVALKOVSKIY ALEXEY VASILYEVITCH50 citations92
US9087633B2Jul 21, 2015
Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof
KHVALKOVSKIY ALEXEY VASILYEVITCH7 citations82