P

Inventor

KHVALKOVSKIY ALEXEY VASILYEVITCH

US19 patents
⚠️ This page may combine multiple inventors who share the name “KHVALKOVSKIY ALEXEY VASILYEVITCH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

12 patents
US9130155B2Sep 8, 2015

Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions

SAMSUNG ELECTRONICS CO LTD59 citations98
US9460397B2Oct 4, 2016

Quantum computing device spin transfer torque magnetic memory

SAMSUNG ELECTRONICS CO LTD28 citations94
US9105830B2Aug 11, 2015

Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions

SAMSUNG ELECTRONICS CO LTD21 citations92
US9076954B2Jul 7, 2015

Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices

SAMSUNG ELECTRONICS CO LTD15 citations84
US9478730B2Oct 25, 2016

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

SAMSUNG ELECTRONICS CO LTD4 citations73
US9166152B2Oct 20, 2015

Diffusionless transformations in MTJ stacks

SAMSUNG ELECTRONICS CO LTD4 citations73
US9076541B2Jul 7, 2015

Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching

SAMSUNG ELECTRONICS CO LTD6 citations73
US10297300B2May 21, 2019

Method and system for determining temperature using a magnetic junction

SAMSUNG ELECTRONICS CO LTD0 citations52
US10276226B2Apr 30, 2019

Method and system for determining temperature using a magnetic junction

SAMSUNG ELECTRONICS CO LTD0 citations52
US9203017B2Dec 1, 2015

Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories

SAMSUNG ELECTRONICS CO LTD1 citations52
US9929339B2Mar 27, 2018

Method and system for providing magnetic junctions including self-initializing reference layers

SAMSUNG ELECTRONICS CO LTD0 citations42
US9741927B2Aug 22, 2017

Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature

SAMSUNG ELECTRONICS CO LTD0 citations42

APALKOV DMYTRO

5 patents

KHVALKOVSKIY ALEXEY VASILYEVITCH

2 patents