Inventor
HELLMUND OLIVER
DE23 patents
⚠️ This page may combine multiple inventors who share the name “HELLMUND OLIVER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
19 patentsUS11011409B2May 18, 2021
Devices with backside metal structures and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations72
US10325804B2Jun 18, 2019
Method of wafer thinning and realizing backside metal structures
INFINEON TECHNOLOGIES AG3 citations72
US10566426B2Feb 18, 2020
Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer
INFINEON TECHNOLOGIES AG4 citations71
US9761548B1Sep 12, 2017
Bond pad structure
INFINEON TECHNOLOGIES AG5 citations71
US11069626B2Jul 20, 2021
Molding compound and semiconductor package with a molding compound
INFINEON TECHNOLOGIES AG0 citations62
US8025783B2Sep 27, 2011
Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements
INFINEON TECHNOLOGIES AG3 citations62
US11552048B2Jan 10, 2023
Semiconductor device including an electrical contact with a metal layer arranged thereon
INFINEON TECHNOLOGIES AG0 citations61
US10553675B2Feb 4, 2020
Isolation of semiconductor device with buried cavity
INFINEON TECHNOLOGIES AG1 citations61
US9960076B2May 1, 2018
Devices with backside metal structures and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations61
US12300759B2May 13, 2025
Method of manufacturing a hybrid device
INFINEON TECHNOLOGIES AG0 citations60
US12107130B2Oct 1, 2024
Semiconductor device having semiconductor device elements in a semiconductor layer
INFINEON TECHNOLOGIES AG0 citations59
US11038028B2Jun 15, 2021
Semiconductor device and manufacturing method
INFINEON TECHNOLOGIES AG0 citations59
US10121859B2Nov 6, 2018
Method of manufacturing semiconductor devices with transistor cells and semiconductor device
INFINEON TECHNOLOGIES AG0 citations52
US10535553B2Jan 14, 2020
Devices with backside metal structures and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations51
US10199332B2Feb 5, 2019
Method of manufacturing a semiconductor device comprising a support element and semiconductor device comprising a support element
INFINEON TECHNOLOGIES AG0 citations51
US10199372B2Feb 5, 2019
Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structures
INFINEON TECHNOLOGIES AG0 citations48
US10074566B2Sep 11, 2018
Semiconductor device and methods for forming a plurality of semiconductor devices
INFINEON TECHNOLOGIES AG0 citations41
US9875926B2Jan 23, 2018
Substrates with buried isolation layers and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations41
US10177033B2Jan 8, 2019
Methods for forming a semiconductor device and semiconductor devices
INFINEON TECHNOLOGIES AG0 citations40
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS10707865B2Jul 7, 2020
Switch device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10158356B2Dec 18, 2018
Switch device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10373868B2Aug 6, 2019
Method of processing a porous conductive structure in connection to an electronic component on a substrate
INFINEON TECHNOLOGIES AUSTRIA AG0 citations40