Inventor

LAM CHUNG H

US231 patents

⚠️ This page may combine multiple inventors who share the name “LAM CHUNG H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAM CHUNG H

IBM

Fin-type antifuse

High-density dual-cell flash memory structure

Self-aligned non-volatile random access memory cell and process to make the same

Method of making shadow RAM cell having a shallow trench EEPROM

Process for improving sheet resistance of an integrated circuit device gate

Field emission phase change diode memory

Semiconductor memory cell and memory array with inversion layer

Shadow ram cell having a shallow trench eeprom

Phase change material with filament electrode

Local interconnect junction on insulator (JOI) structure

Antifuse structure and process

Two square NVRAM cell

Antifuse structure

Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells

Phase change memory cell on silicon-on insulator substrate

Reliable physical unclonable function for device authentication

Reactive material for integrated circuit tamper detection and response

Phase change memory device and method of manufacture

Vertical field effect transistor arrays and methods for fabrication thereof

Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material

Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition

Phase change memory cell with electrode

Twin-cell flash memory structure and method

Method for forming junction on insulator (JOI) structure

NVRAM array device with enhanced write and erase

Non-volatile dynamic random access memory cell

Indirect switching and sensing of phase change memory cells

Embedded one-time programmable non-volatile memory using prompt shift device

Boron out-diffused surface strap process

Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period

Electronic switch for decoupling capacitor

Method of making semiconductor trench capacitor cell having a buried strap

Integration of selector on confined phase change memory

Integration of confined phase change memory with threshold switching material

Writing multiple levels in a phase change memory

Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays

Phase change memory cell with large electrode contact area

Phase change memory cell with large electrode contact area

Self-aligned patterning technique for semiconductor device features

Phase change memory cell with large electrode contact area

Memory array with self-aligned epitaxially grown memory elements and annular FET

Small footprint phase change memory cell

BREITWISCH MATTHEW J

Method to reduce a via area in a phase change memory cell

In via formed phase change memory cell with recessed pillar heater

Small footprint phase change memory cell

LAM CHUNG H

Reconfigurable multi-level sensing scheme for semiconductor memories

3D architecture for bipolar memory using bipolar access device

Drift mitigation for multi-bits phase change memory

FRIEDMAN DANIEL J

Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devices

LUNG HSIANG-LAN

Polysilicon pillar bipolar transistor with self-aligned memory element