Inventor
HASHIMOTO TAKASUKE
JP19 patents
⚠️ This page may combine multiple inventors who share the name “HASHIMOTO TAKASUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
9 patentsUS6337251B1Jan 8, 2002
Method of manufacturing semiconductor device with no parasitic barrier
NEC CORP20 citations92
US6001711ADec 14, 1999
Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer
NEC CORP34 citations92
US5856702AJan 5, 1999
Polysilicon resistor and method of producing same
NEC CORP21 citations92
US5557118ASep 17, 1996
Hetero-junction type bipolar transistor
NEC CORP47 citations92
US5475257ADec 12, 1995
Semiconductor device having an improved low resistive contact
NEC CORP15 citations74
US6028344AFeb 22, 2000
Bipolar transistor on a semiconductor-on-insulator substrate
NEC CORP13 citations73
US5523614AJun 4, 1996
Bipolar transistor having enhanced high speed operation through reduced base leakage current
NEC CORP17 citations73
US5438014AAug 1, 1995
Method of manufacturing semiconductor device
NEC CORP8 citations73
US6087675AJul 11, 2000
Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film
NEC CORP2 citations62
RENESAS ELECTRONICS CORP
6 patentsUS8907460B2Dec 9, 2014
Semiconductor device
RENESAS ELECTRONICS CORP6 citations82
US8786048B2Jul 22, 2014
Semiconductor device
RENESAS ELECTRONICS CORP2 citations62
US9245840B2Jan 26, 2016
Semiconductor device having an inductor surrounds the internal circuit
RENESAS ELECTRONICS CORP0 citations50
US9875962B2Jan 23, 2018
Sensor device having inductors, analog and logic circuits for detecting power flowing through a powerline
RENESAS ELECTRONICS CORP0 citations45
US9632119B2Apr 25, 2017
Sensor device having inductors for detecting power flowing through a power line
RENESAS ELECTRONICS CORP0 citations45
US9529022B2Dec 27, 2016
Sensor device with inductors
RENESAS ELECTRONICS CORP0 citations40
NEC ELECTRONICS CORP
2 patentsUS6570241B2May 27, 2003
Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved
NEC ELECTRONICS CORP11 citations73
US6680234B2Jan 20, 2004
Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved
NEC ELECTRONICS CORP4 citations62