Inventor
HSIEH BOR CHIUAN
TW22 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH BOR CHIUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS11053584B2Jul 6, 2021
System and method for supplying a precursor for an atomic layer deposition (ALD) process
TAIWAN SEMICONDUCTOR MFG CO LTD278 citations98
US10443127B2Oct 15, 2019
System and method for supplying a precursor for an atomic layer deposition (ALD) process
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10157997B2Dec 18, 2018
FinFETs and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11355399B2Jun 7, 2022
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12211924B2Jan 28, 2025
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11798984B2Oct 24, 2023
Seamless gap fill
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11239310B2Feb 1, 2022
Seamless gap fill
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10510867B2Dec 17, 2019
FinFETs and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12293947B2May 6, 2025
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11842930B2Dec 12, 2023
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302595B2May 13, 2025
Dummy hybrid film for self-alignment contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10672866B2Jun 2, 2020
Seamless gap fill
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10084040B2Sep 25, 2018
Seamless gap fill
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12417948B2Sep 16, 2025
Hybrid film scheme for self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9437712B2Sep 6, 2016
High performance self aligned contacts and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
5 patentsUS7947551B1May 24, 2011
Method of forming a shallow trench isolation structure
TAIWAN SEMICONDUCTOR MFG49 citations94
US9218974B2Dec 22, 2015
Sidewall free CESL for enlarging ILD gap-fill window
TAIWAN SEMICONDUCTOR MFG8 citations84
US8900957B2Dec 2, 2014
Method of dual epi process for semiconductor device
TAIWAN SEMICONDUCTOR MFG7 citations84
US8900956B2Dec 2, 2014
Method of dual EPI process for semiconductor device
TAIWAN SEMICONDUCTOR MFG5 citations84
US8999834B2Apr 7, 2015
Sidewall-free CESL for enlarging ILD gap-fill window
TAIWAN SEMICONDUCTOR MFG1 citations52